Bridging synthesis and controllable doping of monolayer 4-inch transition-metal dichalcogenides single crystals with record-breaking electron mobility

Abstract

Epitaxial growth and controllable doping of wafer-scale atomically thin semiconductor single crystals are two central tasks to tackle the scaling challenge of transistors. Despite considerable efforts have been devoted, addressing such crucial issues simultaneously under two-dimensional (2D) confinement is yet to be realized. Here we design an ingenious epitaxial strategy to synthesize record-breaking 4-inch Fe-doped transition-metal dichalcogenides (TMDCs) single crystals on industry-compatible c-plane sapphire without miscut angle. Atomically thin transistors with the highest recorded electron mobility (~231 cm2 V−1 s−1) and remarkable on/off current ratio (~109) are fabricated based on 4-inch Fe-MoS2 single crystals, due to the ultralow contact resistance (~489 Ω µm) and subthreshold swing (~95 mV dec−1). In-depth characterizations and theoretical calculations reveal that the introduction of Fe significantly decreases the formation energy of parallel steps on sapphire surfaces and contributes to the edge-nucleation of unidirectional alignment TMDCs domains (>99%), as well as the modulation of band structures. This work represents a substantial leap in terms of bridging synthesis and doping of wafer-scale 2D semiconductor single crystals without the need for substrate miscut, which should promote the further device downscaling and extension of Moore’s law.

Robust multiferroic in interfacial modulation synthesized wafer-scale one-unit-cell of chromium sulfide

“…1a and Supplementary Fig. 2), which is fundamentally important for the nucleation and growth of unidirectionally aligned Cr 2 S 3 [32][33][34][35] . Figure 1b 36 .…”

“…18). To realize the wafer-scale synthesis of single crystal, the seamless stitching of unidirectional aligned nanosheets is crucial 32,35,41 . The polarized secondharmonic generation (SHG) spectra captured from two merged Cr 2 S 3 domains reveal nearly the identical patterns, indicating the same orientations (Fig.…”

Robust multiferroic in interfacial modulation synthesized wafer-scale one-unit-cell of chromium sulfide

“…1a and Supplementary Fig. 2), which is fundamentally important for the nucleation and growth of unidirectionally aligned Cr 2 S 3 [30][31][32][33] . Figure 1b reveals the digital photography of 1-inch length Cr 2 S 3 on c-plane sapphire, with the optical microscopy (OM) images shown in Fig.…”

“…17). To realize the wafer-scale synthesis of single crystal, the seamless stitching of unidirectional aligned nanosheets is crucial 30,33,37 . The polarized second-harmonic generation (SHG) spectra captured from two merged Cr 2 S 3 domains reveal nearly the identical patterns, indicating the same orientations (Fig.…”