Bridgman growth without crucible contact using the dewetting phenomenon

Duffar, T.; Dusserre, P; Picca, F; Lacroix, Sophie; Giacometti, N.

doi:10.1016/s0022-0248(99)00775-7

Cited by 70 publications

(89 citation statements)

References 3 publications

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“…The dewetting phenomenon was observed for the first time in microgravity experiments [1,2] then successfully reproduced in earth experiments [3][4][5][6][7][8][9][10]. The prevailing wisdom for conducting detached growth on earth is to establish a liquid meniscus between the crystal and the crucible wall and maintain it by controlling the pressure difference between the gas space above the melt and the gap.…”

Section: Introductionmentioning

confidence: 86%

On favorable thermal fields for detached Bridgman growth

Stelian

Volz

Derby

2009

Journal of Crystal Growth

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The thermal fields of two Bridgman-like configurations, representative of real systems used in prior experiments for the detached growth of CdTe and Ge crystals, are studied. These detailed heat transfer computations are performed using the CrysMAS code and expand upon our previous analyses [14] that posited a new mechanism involving the thermal field and meniscus position to explain stable conditions for dewetted Bridgman growth. Computational results indicate that heat transfer conditions that led to successful detached growth in both of these systems are in accordance with our prior assertion, namely that the prevention of crystal reattachment to the crucible wall requires the avoidance of any undercooling of the melt meniscus during the growth run. Significantly, relatively simple process modifications that promote favorable thermal conditions for detached growth may overcome detrimental factors associated with meniscus shape and crucible wetting. Thus, these ideas may be important to advance the practice of detached growth for many materials.

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Section: Introductionmentioning

confidence: 86%

On favorable thermal fields for detached Bridgman growth

Stelian

Volz

Derby

2009

Journal of Crystal Growth

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“…10) have been successfully achieved by SSR from polycrystalline sources obtained by fast sublimation [31]. A very appealing and smart technique called dewetting has been proposed by Duffar et al [32] and recently applied to CdTe [33]. The principle is to impose a gas pressure at the cold part of the crucible, approximately equal to the hydrostatic pressure of the molten material, to get a small meniscus between the solid/liquid interface and the crucible and thus preventing crystal contact during the vertical Bridgman growth (Fig.…”

Section: Mechanical Strain Issuementioning

confidence: 99%

Fundamentals of the CdTe and CdZnTe bulk growth

Triboulet

2005

phys. stat. sol. (c)

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The CdTe and CdZnTe growth are reviewed. After presenting briefly the most recent results concerning the phase equilibria in the Cd-Te system, the impact of the characteristics of the Cd-Te chemical bond on the CdTe crystal growth are discussed. The behaviour of Zn alloying in CdTe is then presented at macroscopic and microscopic scale. Furthermore, the strains introduced by the Zn segregation in the alloys are estimated and shown close to the CZT CRSS. Some improvements in the CZT growth are finally presented and discussed: the adjustment of the CZT stoichiometry, the Zn concentration uniformity issue and the strain issue in the alloys which can be overcome by microgravity growth, self-seeding from a free liquid surface, solid state recrystallization and/or dewetting.1I ntroduction CdTe has attracted great interest and found several industrial applications since now forty years. It shows unique properties making it important and very suitable for several applications like photovoltaic conversion, nuclear detection, application for which it has a tremendous potential, mainly for medical purposes, high performance electro-optic modulators and photorefractive devices. It presents both types of conductivity making diode technology and field effect transistors possible. CdTe-based semimagnetics, like CdMnTe, display extremely exciting properties which have not been so far completely exploited. Furthermore, CdZnTe is used as a substrate for the epitaxial deposition of HgCdTe layers.In view of all these applications, considerable efforts have been dedicated since more than forty years to the crystal growth of CdTe which will be reviewed in close relationship with its intrinsic properties, mainly those that come directly from the characteristics of the Cd-Te chemical bond.2P hase equilibria in the Cd-Te system Crystal growth of CdTe requires precise knowledge of the existence regions of the solid, liquid and gas phases with respect to temperature, pressure and composition. For this purpose, the temperature versus composition, T-x , component pressure or total pressure versus temperature, p-T or P-T, and finally p-T-x or P-T-x diagrams have been experimentally determined and theoretically modeled. In order to control the stoichiometry of the crystals, the deviations from which affect strongly their semiconducting properties, the knowledge of the extent of the homogeneity domain and of the position of the stoichiometric line inside the three phase boundary is essential as well.After many experimental investigations and theoretical studies [1], the Cd-Te phase diagram has been revisited from total vapor pressure scanning experiments by J.H. Greenberg [2]. The determination of the *

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“…This is obtained by applying a gas pressure opposite to the hydrostatic pressure of the liquid (see [1] for a comprehensive review). The technique is based on a small liquid-vapour meniscus existing between the solid-liquid interface and the crucible wall, which slides smoothly along the wall when solidification proceeds [2,3]. The key parameters in this approach are (see figure 1): -The contact angle, θ, of the melt on the crucible wall and the growth angle, α, of the semiconductor.…”

Section: Introductionmentioning

confidence: 99%

“…-In case of InSb under similar oxidizing atmospheres, dewetting is generally not obtained. It may occur during some seldom experiments [3] but is almost impossible to control, appearing only on small areas and for limited amounts of time. Various meniscus shapes can be controlled by the pressure difference [2]: I) convex, ΔP<P hyd , II) convexo-concave, ΔP≈P hyd , III) concave, ΔP>P hyd .…”

Section: Introductionmentioning

confidence: 99%

Thermodynamics of (Ga, In)‐Sb‐O‐Si and impact on dewetting process

Sylla¹,

Duffar

2011

Cryst. Res. Technol.

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A thermodynamic study is performed for the systems (Ga or In)-Sb-O-Si in order to better understand the difference observed during dewetting experiments of GaSb and InSb in silica ampoules. Results show that the melts can be considered as non reactive toward silica. When the atmosphere is clean (≤ 1 ppm O 2 ), no oxide is formed, while, under oxidising atmosphere, oxides exist above the melting point of the antimonide and are known to increase the wetting angle of the melt on the crucible. However the temperature range for oxide stability is smaller in the case of InSb and this may explain why dewetting is easy for GaSb in presence of oxygen, while it is difficult for InSb.

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Bridgman growth without crucible contact using the dewetting phenomenon

Cited by 70 publications

References 3 publications

On favorable thermal fields for detached Bridgman growth

On favorable thermal fields for detached Bridgman growth

Fundamentals of the CdTe and CdZnTe bulk growth

Thermodynamics of (Ga, In)‐Sb‐O‐Si and impact on dewetting process

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