Brief Review of Development and Techniques for High Power Semiconductor Lasers

Yongqiang, 宁永强 Ning; Yong-yi, 陈泳屹 Chen; Jun, 张军 Zhang; Yue, 宋悦 Song; Yu-xin, 雷宇鑫 Lei; Cheng, 邱橙 Qiu; Lei, 梁磊 Liang; Peng, 贾鹏 Jia; Li, 秦莉 Qin; Lijun, 王立军 Wang

doi:10.3788/aos202141.0114001

Cited by 21 publications

(4 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The power and wavelength of diode lasers are highly susceptible to temperature changes, which can cause mode hopping, power instability, and other phenomena. 3,4 Therefore, in scenarios with high stability requirements, BPDL are subjected to secondary temperature control to ensure stable ambient temperature. However, during testing, it was found that while the internal temperature control of the laser was turned on and the ambient temperature was kept constant, the power of the BPDL would still fluctuate suddenly for a long time, and there would be regular changes in power when using polarization maintaining optical fiber to output linearly polarized light.…”

Section: Introductionmentioning

confidence: 99%

Design and fabrication of a butterfly-packaged diode laser with stabilized power output for space applications

Zerui,

Lingqiang,

Xiongfei

et al. 2023

Fourteenth International Conference on Information Optics and Photonics (CIOP 2023)

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Design and fabrication of a butterfly-packaged diode laser with stabilized power output for space applications

Zerui,

Lingqiang,

Xiongfei

et al. 2023

Fourteenth International Conference on Information Optics and Photonics (CIOP 2023)

View full text Add to dashboard Cite

“…Additionally, it plays a significant role in high-precision sensing for applications like wind measurement radar and ranging radar. Moreover, the module finds application in ultrafast lasers, making notable contributions to scientific research and medical treatment [3] .…”

Section: Introductionmentioning

confidence: 99%

Performance and reliability study on high-power single-mode 980nm semiconductor laser pump

Zhang,

Bai,

Tang

et al. 2023

Eighteenth National Conference on Laser Technology and Optoelectronics

View full text Add to dashboard Cite

We have developed a high-power, high-reliability single-mode 980nm semiconductor laser pump module for all-optical networks in the optical communication industry, including terrestrial long-distance optical fiber communication, submarine optical cables, and satellite communication. This module serves as thecore key component of erbium-doped fiber amplifiers (EDFA). To achieve an 80% coupling efficiency, we utilized the 14-pin butterfly device packaging process, coupling our self-developed single-mode 980nm semiconductor laser chip with a specially designed wedge lens fiber.. Fiber Bragg grating and thermal management technology were employed to ensure stable lock wave performance within a temperature range of -40 to 75°C , and a working current of 900 to 1800mA. The spectral width is <0.5nm, the side-mode rejection ratio exceeds25dB, and the in-band power ratio surpasses 95%. The module delivers a single-mode output power exceeding 1.3W and exhibits a low power stability of no more than 3.5% at a low power of 30mW. The module features high singlemode output power, low power stability, narrow spectral width, and high edge-mode rejection ratio. After 2000 hours of high-current aging test and reliability verification, all module samples still maintain stable output power, and passed the verification of Telcordia GR-468-CORE. The successful development of this product fills the gap in the field of high-power single-mode 980nm semiconductor laser pump modules in China. It is expected to play an important role in the fields of optical communication systems, laser sensing and scientific research applications.

show abstract

“…High power semiconductor lasers have many advantages such as light weight, high efficiency, small size, high reliability and long service life, and are widely used in production, medical, aerospace, national defense and scientific research and other fields [1,2]. The extensive utilization of the high-power semiconductor laser is closely linked to the ongoing enhancement and advancement of its driving power supply [3,4].…”

Section: Introductionmentioning

confidence: 99%

Design of High-Performance Driving Power Supply for Semiconductor Laser

Feng,

Zhao,

Zhang

et al. 2023

Electronics

View full text Add to dashboard Cite

High power semiconductor laser is a kind of photoelectric device with high efficiency and high stability, the performance of its drive system directly affects its output characteristics and service life. In order to solve the problems of stability and robustness of the output power of the semiconductor laser, a semiconductor laser driving power supply with high efficiency, low ripple and strong anti-interference ability was developed. In this paper, the topology of the LCC resonant converter is adopted (LCC refers to the type of resonant converter, because its resonator is composed of an inductor L and two capacitors C, it is called LCC resonant converter). The power supply adopts full-bridge LCC resonant power topology. Firstly, a mathematical model is established to analyze the relationship between LCC resonator parameters and output current gain. Secondly, an LCC resonator parameter design method is proposed to reduce the current stress of components, and the variable frequency phase shift (PFM-PWM) composite control strategy and linear active disturbance rejection control (LADRC) algorithm are proposed, which not only ensures the zero voltage (ZVS) conduction of MOS (Metal-Oxide-Semiconductor) tube, but also reduces the on-off loss of MOS tube. The PFM-PWM composite control strategy and LADRC algorithm not only improve the power efficiency of the drive power supply, suppress the output current ripple, but also ensure that the output current of the drive power supply is stable when the input voltage, load and parasitic parameters of the circuit change. Finally, the simulation and experimental results show that the power supply can be continuously adjustable in the output current range of 0–40 A, the current ripple is less than 0.8%, and the working efficiency is up to 92%. It has the characteristics of high stability, small ripple, high efficiency, low cost and good robustness.

show abstract

Brief Review of Development and Techniques for High Power Semiconductor Lasers

Cited by 21 publications

References 0 publications

Design and fabrication of a butterfly-packaged diode laser with stabilized power output for space applications

Design and fabrication of a butterfly-packaged diode laser with stabilized power output for space applications

Performance and reliability study on high-power single-mode 980nm semiconductor laser pump

Design of High-Performance Driving Power Supply for Semiconductor Laser

Contact Info

Product

Resources

About