Brief Review of Surface Passivation on III-V Semiconductor

Zhou, Lu; Bo, Baoxue; Yan, Xingzhen; Wang, Chao; Chi, Yin; Yang, Xiaotian

doi:10.3390/cryst8050226

Cited by 79 publications

(34 citation statements)

References 52 publications

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“…An oxidation could be a source of non-radiative recombinations [28] especially in Ⅲ-Ⅴ semiconductors [29][30]. Indeed, the native surface oxides are known to generate interfacial defects due to their poor stability which leads to a Fermi level surface pinning by introducing surface energy levels in the band gap [30]. This would be one of the causes of the luminescence quenching at pixel edges revealed by CL/PL mappings.…”

Section: Figure 7 Integrated CL Intensity Mappings At Different Temperatures For 36×36 µM² and 56×56 µM² Pixelsmentioning

confidence: 99%

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Boussadi

Rochat

Barnes

et al. 2021

Journal of Luminescence

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Previous reports have studied the impact of sidewall defects on AlGaInP micro light emitting diode (µLED) only by Current-Voltage-Luminescence (I-V-L) measurements. In this work, we propose an alternative approach to investigate these defects directly after MESA formation, by coupling optical characterization techniques together with Time-of-flight secondary ion mass spectrometry (TOF-SIMS) on AlGaInP square shaped pixels of different sizes formed by BCl3-based Reactive Ion Etching (RIE). It is found that for a 6×6 µm² pixel, the light emission homogeneity is largely impacted by the sidewall defects. From emission efficiency map deduced by temperature-dependent cathodoluminescence measurements, we estimate that 86% of the 6×6 µm² pixel exhibit a lower efficiency than the center. The carriers lifetime extracted from time-resolved photoluminescence (TRPL) measurements on larger pixel begins to decrease gradually at 3 µm from the sidewall due to non-radiative recombinations. On the other hand, the TOF-SIMS analysis shows that residues of boron and chlorine remain on the surface and sidewalls of the pixel after BCl3 etching. These results show the importance to characterize the µLEDs at the MESA step and the necessity to optimize the etching process and the passivation.

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Section: Figure 7 Integrated CL Intensity Mappings At Different Temperatures For 36×36 µM² and 56×56 µM² Pixelsmentioning

confidence: 99%

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Boussadi

Rochat

Barnes

et al. 2021

Journal of Luminescence

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“…The role of perimeter recombination in cells, which particularly affects their voltage, was studied in single junction, 20–22 in the subcells that compose a three‐junction cell, 23 and in three‐junction structures 11,12,24 . An effective reduction of GaAs surface states density can be obtained by sulfur passivation, plasma treatments, or atomic layer deposition (ALD) 25 . In addition, Ref 24 .…”

Section: Introductionmentioning

confidence: 99%

Miniaturization of InGaP/InGaAs/Ge solar cells for micro‐concentrator photovoltaics

Albert

Jaouad

Hamon

et al. 2021

Progress in Photovoltaics

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Micro‐concentrator photovoltaic (CPV), incorporating micro‐scale solar cells within concentrator photovoltaic modules, promises an inexpensive and highly efficient technology that can mitigate the drawbacks that impede standard CPV, such as resistive power losses. In this paper, we fabricate micro‐scale multijunction solar cells designed for micro‐CPV applications. A generic process flow, including plasma etching steps, was developed for the fabrication of complete InGaP/InGaAs/Ge microcells with rectangular, circular, and hexagonal active areas down to 0.089 mm2 (0.068‐mm2 mesa). Large cells (>1 mm2) demonstrate good electrical performance under one sun AM1.5D illumination, but a degradation in the open‐circuit voltage (VOC) is observed on the smallest cells. This effect is attributed to perimeter recombination for which a passivation effect by the antireflective coating partially recovers the VOC. The VOC penalty for small cells is also reduced under high‐intensity illumination, from 3.8% under sun to 1.0% at 974 suns. High intensity illumination yields an efficiency of 33.8% under 584 suns for a 0.25‐mm2 and microcells are expected to show higher efficiency than standard cells under very high concentration.

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“…Other than epitaxial passivation layers, a substantial amount of work has also been done to find suitable non-epitaxial passivation layers (mainly high k-dielectric), including but not limited to Al 2 O 3 , Gd 2 O 3 , LaF 3 , ZnO, ZnS, GaS, SiO 2 , MgO, Ta 2 O 3 , PO x , Si 3 N x , etc. 1,[6][7][8][9][10] . Many of these dielectric materials have been shown to function as suitable passivation layers; however, in most cases, controlled and reproducible formation of high quality and defect-free passivation layer remains a challenging task 11 .…”

Section: Introductionmentioning

confidence: 99%

Passivation of InP solar cells using large area hexagonal-BN layers

et al. 2021

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Surface passivation is crucial for many high-performance solid-state devices, especially solar cells. It has been proposed that 2D hexagonal boron nitride (hBN) films can provide near-ideal passivation due to their wide bandgap, lack of dangling bonds, high dielectric constant, and easy transferability to a range of substrates without disturbing their bulk properties. However, so far, the passivation of hBN has been studied for small areas, mainly because of its small sizes. Here, we report the passivation characteristics of wafer-scale, few monolayers thick, hBN grown by metalorganic chemical vapor deposition. Using a recently reported ITO/i-InP/p+-InP solar cell structure, we show a significant improvement in solar cell performance utilizing a few monolayers of hBN as the passivation layer. Interface defect density (at the hBN/i-InP) calculated using C–V measurement was 2 × 1012 eV−1cm−2 and was found comparable to several previously reported passivation layers. Thus, hBN may, in the future, be a possible candidate to achieve high-quality passivation. hBN-based passivation layers can mainly be useful in cases where the growth of lattice-matched passivation layers is complicated, as in the case of thin-film vapor–liquid–solid and close-spaced vapor transport-based III–V semiconductor growth techniques.

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Brief Review of Surface Passivation on III-V Semiconductor

Cited by 79 publications

References 52 publications

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Miniaturization of InGaP/InGaAs/Ge solar cells for micro‐concentrator photovoltaics

Passivation of InP solar cells using large area hexagonal-BN layers

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