Transparent conducting
materials are an essential component of
optoelectronic devices. It is proven difficult, however, to develop
high-performance materials that combine the often-incompatible properties
of transparency and conductivity, especially for p-type-doped materials.
In this work, we have employed a large set of molecular semiconductors
extracted from the Cambridge Structural Database to evaluate the likelihood
of transparent conducting material technology based on p-type-doped
molecular crystals. Candidates are identified imposing the condition
of high highest occupied molecular orbital (HOMO) energy level (for
the material to be easily dopable), high charge carrier mobility (for
the material to display large conductivity when doped), and a high
threshold for energy absorption (for the material to absorb radiation
only in the ultraviolet). The latest condition is found to be the
most stringent criterion in a virtual screening protocol on a database
composed of structures with sufficiently wide two-dimensional (2D)
electronic bands. Calculation of excited-state energy is shown to
be essential as the HOMO–lowest unoccupied molecular orbital
(LUMO) gap cannot be reliably used to predict the transparency of
this material class. Molecular semiconductors with desirable mobility
are transparent because they display either forbidden electronic transition(s)
to the lower excited states or small exchange energy between the frontier
orbitals. Both features are difficult to design but can be found in
a good number of compounds through virtual screening.