Bright single photon sources in lateral silicon carbide light emitting diodes

Widmann, Matthias; Niethammer, Matthias; Makino, Takahiro; Rendler, Torsten; Lasse, Stefan; Ohshima, Takeshi; Ul-Hassan, Jawad; Són, Nguyên Tiên; Lee, Sang-Yun; Wrachtrup, Jörg

doi:10.1063/1.5032291

Cited by 43 publications

(41 citation statements)

References 31 publications

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“…Photoluminescence (PL) has also been used extensively to characterize deep-level defects in bulk SiC. Recently, the optical properties of defects formed after oxidation near the SiC/SiO 2 interface were also investigated [22][23][24][25][26][27][28][29][30][31]. These defects can be addressed individually when an appropriate excitation wavelength is used.…”

Section: Introductionmentioning

confidence: 99%

Optically Active Defects at the SiC/SiO2 Interface

et al. 2019

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The SiC/SiO 2 interface is a central component of many SiC electronic devices. Defects intrinsic to this interface can have a profound effect on their operation and reliability. It is therefore crucial to both understand the nature of these defects and develop characterization methods to enable optimized SiCbased devices. Here we make use of confocal microscopy to address single SiC/SiO 2-related defects and show the technique to be a noncontact, nondestructive, spatially resolved and rapid means of assessing thequality of the SiC/SiO 2 interface. This is achieved by a systematic investigation of the defect density of the SiC/SiO 2 interface by varying the parameters of a nitric oxide passivation anneal after oxidation. Standard capacitance-based characterization techniques are used to benchmark optical emission rates and densities of the optically active SiC/SiO 2-related defects. Further insight into the nature of these defects is provided by low-temperature optical measurements on single defects.

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Section: Introductionmentioning

confidence: 99%

Optically Active Defects at the SiC/SiO2 Interface

et al. 2019

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“…In [23] a lateral oriented p-i-n diode SPED was demonstrated in 4H-SiC. The emitted light was mainly condensed around the interface of p-and n-layers, and distinct emitters were found in the i-layer.…”

Section: Optically and Electrically Driven Single Photon Sources (Spss)mentioning

confidence: 99%

“…SPED has been demonstrated in silicon anti-sites in SiC, known as D1 centers [22] or with other surfacerelated defects in 4H-SiC p-i-n junction diodes [23,25]. In [22] vertically stacked p-n junctions were fabricated by ion implantation into high quality, lightly doped epi-layers of 4H and 6H-SiC.…”

Section: Optically and Electrically Driven Single Photon Sources (Spss)mentioning

confidence: 99%

“…An even more exciting field for quantum devices in SiC [19] can be found in its electrical excellent properties and electrical device fabrication, that is by far more established than photonics, as SiC is used in high power electronics [20] and in metal-oxide-semiconductor field-effect transistor (MOSFET) [21]. Electrically controlled quantum devices can be envisioned for the detection of spin signals and single-photon excitation [22][23][24][25], however, integration of electrically and optically controlled devices appear at an early stage.SiC and other materials have been proposed as a platform for spin-based photonic quantum technologies. The light-matter interface relating quantum light states and the quantum emitter internal states (electron spin) can be used to constitute quantum circuits and networks [26], where quantum entanglement distribution and storage is performed [27].…”

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confidence: 99%

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Silicon carbide color centers for quantum applications

2020

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Silicon carbide has recently surged as an alternative material for scalable and integrated quantum photonics, as it is a host for naturally occurring color centers within its bandgap, emitting from the UV to the IR even at telecom wavelength. Some of these color centers have been proved to be characterized by quantum properties associated with their single-photon emission and their coherent spin state control, which make them ideal for quantum technology, such as quantum communication, computation, quantum sensing, metrology and can constitute the elements of future quantum networks. Due to its outstanding electrical, mechanical, and optical properties which extend to optical nonlinear properties, silicon carbide can also supply a more amenable platform for photonics devices with respect to other wide bandgap semiconductors, being already an unsurpassed material for high power microelectronics. In this review, we will summarize the current findings on this material color centers quantum properties such as quantum emission via optical and electrical excitation, optical spin polarization and coherent spin control and manipulation. Their fabrication methods are also summarized, showing the need for on-demand and nanometric control of the color centers fabrication location in the material. Their current applications in single-photon sources, quantum sensing of strain, magnetic and electric fields, spin-photon interface are also described. Finally, the efforts in the integration of these color centers in photonics devices and their fabrication challenges are described.proved to host these types of color centers, we can now determine that the material has approached the quality needed for quantum applications development.The first bulk material studied for applications in quantum technology is diamond. It was possible to isolate single color centers and determine their role for application in quantum technologies. As an example, the nitrogen-vacancy (NV) center [10], hosted by the diamond matrix, has become the leading color center in applications such as quantum sensing [11], which is a more achievable application on the road map towards quantum networks. Further, other color centers such as the Germanium vacancy (GeV) [12] and the siliconvacancy (SiV) [13] in diamond proved to have an enormous potential for quantum optical spin-photon interface due to their narrow bandwidth emission [14]. The wide bandgap of the diamond, together with its weak spinorbit coupling and diluted nuclear-spin bath, gives to diamond color centers a remarkable spin coherence, and isotope engineering can enhance it further, due to the possibility of growing highly pure samples [15]. SiC also enjoys most of these properties, and benefits from mature production protocols on a large scale which are available for silicon, excellent nanofabrication quality [16], and capability of ion implantation without the side effects typical of the diamond, such as graphitization during irradiation [17]. However, diamond has some limitations in this respect in...

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7D High‐Dynamic Spin‐Multiplexing

Qin,

Guo,

Pazos

et al. 2024

Advanced Science

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Multiplexing technology creates several orthogonal data channels and dimensions for high‐density information encoding and is irreplaceable in large‐capacity information storage, and communication, etc. The multiplexing dimensions are constructed by light attributes and spatial dimensions. However, limited by the degree of freedom of interaction between light and material structure parameters, the multiplexing dimension exploitation method is still confused. Herein, a 7D Spin‐multiplexing technique is proposed. Spin structures with four independent attributes (color center type, spin axis, spatial distribution, and dipole direction) are constructed as coding basic units. Based on the four independent spin physical effects, the corresponding photoluminescence wavelength, magnetic field, microwave, and polarization are created into four orthogonal multiplexing dimensions. Combined with the 3D of space, a 7D multiplexing method is established, which possesses the highest dimension number compared with 6 dimensions in the previous study. The basic spin unit is prepared by a self‐developed laser‐induced manufacturing process. The free state information of spin is read out by four physical quantities. Based on the multiple dimensions, the information is highly dynamically multiplexed to enhance information storage efficiency. Moreover, the high‐dynamic in situ image encryption/marking is demonstrated. It implies a new paradigm for ultra‐high‐capacity storage and real‐time encryption.

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Bright single photon sources in lateral silicon carbide light emitting diodes

Cited by 43 publications

References 31 publications

Optically Active Defects at the SiC/SiO2 Interface

Optically Active Defects at the SiC/SiO2 Interface

Silicon carbide color centers for quantum applications

7D High‐Dynamic Spin‐Multiplexing

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