Precise pixel control of quantum dots (QDs) offers unparalleled opportunities for various display applications, such as the OLED and Micro-LED. However, precise selective patterning of QDs is still a challenge due to the lack of a design methodology. Therefore, the aim of this study was thus to develop a photoinitiator-grafted oligomer for "on demand" control of active free radicals to improve the line edge roughness in QD patterning. This photosensitive oligomer was constructed by grafting the photosensitive benzophenone structure onto a phenolic resin oligomer, thus resulting in the confinement of active free radicals and highly selective photolithography. As a proof of concept, we have demonstrated high-quality QD patterns with high resolution and low edge roughness by using direct in situ photolithography. This work opens an avenue for the precise design and synthesis of QD photoresists, improving the precision of QD patterning for display applications.