semiconductor nanomaterials (e.g., nanowires, nanorods, and nanoplates) are emerging as new generation materials for polarization detection. [3][4][5][6][7][8][9][10] Although UVresponsive photodetectors can be achieved using 1D wide bandgap materials (e.g., GaN [4] and ZnO [10] ) or 2D materials (e.g., α-MoO 3 , [8] GeS 2 , [11] and NiPS 3 [12] ), the scale up and alignment of these materials are still obstacles to achieving polarization imaging and the corresponding detection systems. Therefore, it is of great interest to look for alternative strategies for polarization-sensitive UV detection.The incorporation of luminescent downshifting materials, such as fluorescent dyes, rare-earth doped compounds, and colloidal quantum dots (QDs), with charge-coupled devices (CCDs) or complementary metal oxide semiconductors (CMOS) provides a low-cost route to fabricating UV photodetectors. [13][14][15][16] Among them, colloidal QDs show advantageous properties of strong UV absorption, tunable photoluminescence (PL) emission, high quantum yields (QYs), and straightforward solution processability, [17][18][19] which have been successfully applied to enhance the UV response of Si photodetectors [15,16] and solar cells. [20] In addition to the excellent PL features, the unique structure of 1D dot-in-rods (DIRs) enables large Stokes shift and linearly polarized excitation and emission. [21][22][23] By aligning and ordering the DIRs, [24][25][26][27][28] macroscopic-scale polarized emission has been achieved, providing a potential for use in LCD display backlights. [29][30][31][32][33] In this work, we first demonstrated the incorporation of aligned CdSe@CdS DIRs as downshifting materials with an electron multiplying chargecoupled device (EMCCD) for polarization-sensitive UV detection.