Broad-Band Small-Signal Impedance Characterization of Silicon (Si) P+-N-N+ Impatt Diodes

Ohtomo, M.

doi:10.1109/tmtt.1974.1128317

Cited by 11 publications

(1 citation statement)

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“…The component sensitive attributes of the observed CEC represent the main added features of CNLS supported IS analysis with respect to the traditional capacitance studies of p-n junctions. 13,30,31 The capacitance techniques, often based on small signal perturbations like IS, frequently use voltage (as well as frequency) selective signatures of the SCR and diffusion capacitances to separately identify these elements. The same approach is also used in IS measurements to resolve the contributions of these two types of capacitances from the recorded net device capacitance.…”

Section: Ac Nyquist Spectra and Component-sensitive Equivalent Circui...mentioning

confidence: 99%

Quantitative characterization of silicon solar cells in the electro-analytical approach: Combined measurements of temperature and voltage dependent electrical parameters

et al. 2012

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Section: Ac Nyquist Spectra and Component-sensitive Equivalent Circui...mentioning

confidence: 99%

Quantitative characterization of silicon solar cells in the electro-analytical approach: Combined measurements of temperature and voltage dependent electrical parameters

et al. 2012

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A lumped‐distributed small‐signal model for a class of transit‐time semiconductor devices

Quang

1976

Circuit Theory & Apps

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SUMMARYIn this paper a new lumped-distributed small-signal and noise model is presented for a class of transit-time semiconductor devices including the IMPATT, BARITT, Transferred Electron and Space Charge Limited (SCL) diodes. The assumption of uniform carrier velocity is made and diffusion is neglected. The diode-model is composed of lumped elements and dispersionless transmission lines, hence it is very suitable for computer-aided circuit analysis. Broad agreement has been found between the experimental behaviour of devices and that of their models.

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A coaxial test fixture for characterizing low‐impedance microwave two‐terminal devices

Monahan

Morris

Steer

1993

Micro & Optical Tech Letters

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A technique using a coaxial diode test fixture for the mount‐independent characterization of potentially unstable two‐terminal devices is presented. A standard three‐terminal calibration procedure using reference packages is used to calibrate to the surface of the packaged device. The test fixture is designed to present a low, nonresonant impedance to the device so that measurement resolution is enhanced. The characterization of an IMPATT diode is presented as an example. © 1993 John Wiley & sons, Inc.

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Broad-Band Small-Signal Impedance Characterization of Silicon (Si) P+-N-N+ Impatt Diodes

Cited by 11 publications

References 20 publications

Quantitative characterization of silicon solar cells in the electro-analytical approach: Combined measurements of temperature and voltage dependent electrical parameters

Quantitative characterization of silicon solar cells in the electro-analytical approach: Combined measurements of temperature and voltage dependent electrical parameters

A lumped‐distributed small‐signal model for a class of transit‐time semiconductor devices

A coaxial test fixture for characterizing low‐impedance microwave two‐terminal devices

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