2022
DOI: 10.1109/lmwc.2022.3166563
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Broadband 100-W Ka-Band SSPA Based on GaN Power Amplifiers

Abstract: In this letter, we report on the realization of a two-stage 16-way solid-state power amplifier (SSPA) in the Ka-band. To this end, we describe the design of a high-power amplifier (HPA) in a 100-nm gallium nitride (GaN) process and its integration into a split-block waveguide module. The PA module achieves an output power of more than 7.6 W between 28 and 39 GHz. In conjunction with 16 of these PA modules, we then employed a custom low-loss radial splitter and combiner to create a compact SSPA system. The two-… Show more

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Cited by 12 publications
(5 citation statements)
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“…If amplifiers with severely differing insertion phase would be used, load-pulling phenomena could occur, which could deteriorate the power or efficiency of the amplifiers [34]. However, in our own experiments with amplifiers that feature an insertion phase spread of up to ±25 • , no significant deterioration could be observed [35]. A comparison of the measured and simulated sum-port reflection coefficients can be seen in Fig.…”
Section: Measurements and Analysismentioning
confidence: 87%
“…If amplifiers with severely differing insertion phase would be used, load-pulling phenomena could occur, which could deteriorate the power or efficiency of the amplifiers [34]. However, in our own experiments with amplifiers that feature an insertion phase spread of up to ±25 • , no significant deterioration could be observed [35]. A comparison of the measured and simulated sum-port reflection coefficients can be seen in Fig.…”
Section: Measurements and Analysismentioning
confidence: 87%
“…Radial combining technology is widely known for its low-loss advantages. 8,9 Solid-state power amplifiers (SSPAs) using radial combiner and gallium nitride (GaN) devices within 100 GHz were reported in recent years, [10][11][12] but radial power combining in THz band have not yet emerged until now.…”
Section: Introductionmentioning
confidence: 99%
“…Under new achievements of G‐band power amplifier (PA) chip Using InP HBT process, several research on G‐band waveguide binary power combining have been released, 5–7 and a significant feature is demonstrated that the combining efficiency deteriorates obviously with the frequency up to THz band. Radial combining technology is widely known for its low‐loss advantages 8,9 . Solid‐state power amplifiers (SSPAs) using radial combiner and gallium nitride (GaN) devices within 100 GHz were reported in recent years, 10–12 but radial power combining in THz band have not yet emerged until now.…”
Section: Introductionmentioning
confidence: 99%
“…Output power available from an individual solid-state power amplifier is very limited, especially at high frequencies, so that multi-way power combining is essential to achieve a high output power [1], [2]. Rectangular waveguide-based radial power combiners are widely used at millimeter-wave frequencies to produce high output powers by combining power amplifier modules [3], [4], [5], [6], [7], [8], [9], [10], [11], [12], [13].…”
Section: Introductionmentioning
confidence: 99%