Broadband (22–40 GHz) multistage MMIC low‐noise amplifier

Abstract

In this article, a wideband (22–40 GHz) four‐stage monolithic microwave integrated circuit low noise amplifier has been presented, which was fabricated in WIN 0.15 um pseudomorphic high electron‐mobility transistor technology. The source inductor and interstage mismatching methods were used to realize both low noise and flatten gain simultaneously in wideband. The designed LNA has achieved a gain of 22 ± 1 dB and a noise figure of less than 3 dB from 22 to 40 GHz. The chip size was 2 × 1 mm2, which can be used in active phased‐array receiver modules, millimeter wave imaging, broadband wireless communication systems, and 24‐GHz short‐range sensors. In addition the LNA was worked with only one supply power, which was realized by four self ‐bias resistances. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:956–959, 2016

Ku‐band GaAs mHEMT MMIC and RF front‐end module for space applications

“…Hence, the NF performance of the system is mostly affected by the NF and gain performance of the first stage. 5 In order to accomplish the electrical requirement, 6 μm × 30 μm and 6 μm × 40μm transistors were chosen to use in the first and second stage, respectively. The chosen transistors were biased with 1.2V d with a total 45 mA current.…”

“…In addition, the total noise figure of the cascaded amplifiers and passive components is determined by the Friis' Equation ) where the “NF x ” is the noise figure, “G x ” is the gain of the x th stage of the LNA module. Hence, the NF performance of the system is mostly affected by the NF and gain performance of the first stage 5 . In order to accomplish the electrical requirement, 6 μm × 30 μm and 6 μm × 40μm transistors were chosen to use in the first and second stage, respectively.…”

Analysis and design of a 1.7‐ to 27.1‐GHz low‐noise amplifier

“…Table 1 compares the presented LNA with earlier reported broadband LNAs using GaAs pHEMT process 3,5,6,8,10,14 . To evaluate the overall performance of LNAs, two figures of merit, represented by FOM 1 and FOM 2 used in refs.…”

“…The fabricated LNA is verified experimentally through 1 compares the presented LNA with earlier reported broadband LNAs using GaAs pHEMT process. 3,5,6,8,10,14…”

“…Broadband low-noise amplifier (LNA) is tremendously needed in the areas of optical communication, high-speed data transmission, wideband communication systems, and measurement instruments. [1][2][3][4][5][6][7][8][9][10] Since the LNA is usually used as the first functional block in abovementioned receivers, and the performance of LNA directly determines the noise characteristics and sensitivity of receivers, a broadband LNA with high gain and low noise is preferred in these systems. In low-power applications, the dc dissipation of LNA is concerned as well.…”