Broadband and photovoltaic THz/IR response in the GaAs-based ratchet photodetector

Bai, Pei Kang; Li, Xiaohong; Chu, Weidong; Bai, Xueqi; Huang, Siheng; Zhang, Yueheng; Shen, Wei; Fu, Zhanglong; Shao, Dixiang; Tan, Zhongxin; Li, Hua; Cao, Juncheng; Li, Lianhe; Linfield, E. H.; Xie, Yan; Zhao, Ziran

doi:10.1126/sciadv.abn2031

Cited by 25 publications

(4 citation statements)

References 57 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Hot carriers injected into the semiconductor structure interact with cold carriers and excite them to higher energy states. Subsequently, based on this theory, Bai et al proposed an ultra-broad-spectrum photon-type detector based on a new GaAs/AlxGa 1−x As quantum ratchet structure [82]. As shown in Figure 8a, the detector was capable of realizing a positive-incidence response with a response range covering 4-300 THz, which far exceeds the coverage of other photon-type detectors.…”

Section: Pve-type Broadband Photodetectorsmentioning

confidence: 99%

Recent Advances in Broadband Photodetectors from Infrared to Terahertz

Si,

Zhou,

Liu

et al. 2024

Micromachines

View full text Add to dashboard Cite

The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, material identification, and biomedical detection. In this review, we present a comprehensive overview of the latest advances in broadband photodetectors operating in the infrared to terahertz range, highlighting their classification, operating principles, and performance characteristics. We discuss the challenges faced in achieving broadband detection and summarize various strategies employed to extend the spectral response of photodetectors. Lastly, we conclude by outlining future research directions in the field of broadband photodetection, including the utilization of novel materials, artificial microstructure, and integration schemes to overcome current limitations. These innovative methodologies have the potential to achieve high-performance, ultra-broadband photodetectors.

show abstract

Section: Pve-type Broadband Photodetectorsmentioning

confidence: 99%

Recent Advances in Broadband Photodetectors from Infrared to Terahertz

Si,

Zhou,

Liu

et al. 2024

Micromachines

View full text Add to dashboard Cite

show abstract

“…In the quest for advanced PD materials and designs that can meet the growing demand for more sensitive photoresponse, several reports have emerged, focusing on PDs that incorporate various nanostructures. For example, Bai et al introduced a ratchet structure using the GaAs/Al x Ga 1−x As heterojunction, which has a great potential in an ultrabroadband photoresponse from the near-IR to the THz region (4-300 THz) [153]. Their PD achieved an impressive peak R of 7.3 A W −1 , which is five orders of magnitude higher than that of the other broadband photon-type detector.…”

Section: Broadband Detectorsmentioning

confidence: 99%

Recent progress of group III–V materials-based nanostructures for photodetection

Cong,

Yin,

Zheng

et al. 2024

Nanotechnology

View full text Add to dashboard Cite

Due to the suitable bandgap structure, efficient conversion rates of photon to electron, adjustable optical bandgap, high electron mobility/aspect ratio, low defects, and outstanding optical and electrical properties for device design, III-V semiconductors have shown excellent properties for optoelectronic applications, including photodiodes, photodetectors, solar cells, photocatalysis, etc. In particular, III-V nanostructures have attracted considerable interest as a promising photodetector platform, where high-performance photodetectors can be achieved based on the geometry-related light absorption and carrier transport properties of III-V materials. However, the detection range from Ultraviolet to Terahertz including broadband photodetectors of III-V semiconductors still have not been more broadly development despite significant efforts to obtain the high performance of III-V semiconductors. Therefore, the recent development of III-V photodetectors in a broad detection range from Ultraviolet to Terahertz, and future requirements are highly desired.In this review, the recent development of photodetectors based on III-V semiconductor with different detection range is discussed. First, the bandgap of III-V materials and synthesis methods of III-V nanostructures are explored, subsequently, the detection mechanism and key figures-of-merit for the photodetectors are introduced, and then the device performance and emerging applications of photodetectors are provided. Lastly, the challenges and future research directions of III-V materials for photodetectors are presented.

show abstract

“…Near-infrared (NIR) photodetectors find applications in a broad spectrum of uses, including sensors for autonomous driving cars, optical communication and medical instruments. These photodetectors are fabricated using diverse materials such as binary semiconductors such as GaAs, InP, and CdTe, 1–4 ternary semiconductors like HgCdTe and InGaAs, 5–7 or silicon-based PIN devices. 8,9 However, the fabrication process for these photodetectors is intricate and involves multiple costly steps, limiting the broader applications.…”

Section: Introductionmentioning

confidence: 99%