Broadband and Polarization-Independent Efficient Vertical Optical Coupling With 45° Mirror for Optical I/O of Si Photonics

Noriki, Akihiro; Amano, Tsuyoshi; Shimura, Daisuke; Onawa, Yosuke; Sasaki, Hirokazu; Yamada, Koji; Nishi, Hidetaka; Tsuchizawa, Tai; Ukita, Shigenari; Sasaki, Mikiko; Mori, Masahiko

doi:10.1109/jlt.2016.2543998

Cited by 8 publications

(5 citation statements)

References 21 publications

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“…M.S. Parekh et al [53] proposed electrical optical and fluidic through-silicon via for silicon interposer applications with 100 μm diameters. To promote light coupling to other materials for efficient electro-optical modulation, the thickness of silicon is set to be 500 nm by H.W.…”

Section: The Silicon Interposer Testing Technologymentioning

confidence: 99%

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Tian

Liu

2018

Electronics

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Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed.Electronics 2018, 7, 112 2 of 29 wafer was invented by M.G Smith et al. [2], which opposite surfaces were connected ohmically to the degenerately doped portions to be electrically connected along the thru-connection. With further research and exploration, 2.5D/3D integration technology with TSV realized integrated circuits with advantages of high interconnection density, high performance, low power consumption, and low cost [3,4]. In addition, the core is widely considered to be the leading technology in the field of high density packaging in the future and is an effective way to break through Moore's Law [5][6][7]. Figure 1. Silicon interposer through electrical copper coating technology production: (a) The construction of through-silicon via on the wafer; (b) The dry film etchant is stuck on the wafer, then exposed and etched; (c) Hole plating and pad fabrication by electroplating methods; (d) The photoresist removing. Adapted with permission from [27], Copyright Elsevier, 2016.

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Section: The Silicon Interposer Testing Technologymentioning

confidence: 99%

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Tian

Liu

2018

Electronics

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“…[15][16][17][18][19][20][21][22] We have worked on a planar 45°mirror for Si photonics, and a broadband polarization-independent vertical optical coupling was demonstrated. 23,24) However, the maximum mode-field diameter (MFD) output from the 45°mirror depended on the characteristics of the Si-photonics spot-size converters (SSCs), and it was about 3 μm in general. Therefore, an efficient coupling with the standard SMF, which has the MFD of around 10 μm, was difficult due to the large modefield mismatch.…”

Section: Introductionmentioning

confidence: 99%

Beam waist controlled vertical optical path conversion using integrated curved micro mirror for silicon photonics

Noriki

Amano

2020

Jpn. J. Appl. Phys.

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The optical input/output (I/O) of silicon (Si) photonics is a significant challenge in terms of its practical application. We recently demonstrated a vertical optical I/O using a 45°curved micro mirror. In this paper, the beam conversion controllability of the curved micro mirrors was studied. Different design curved micro mirrors were fabricated and those beam conversions were evaluated. The beam waist of the reflected light was successfully controlled by tuning the curvatures of the mirror. The experimental data were well agreed with simulation results. The coupling efficiency improvement between the mode mismatched fibers (a single-mode fiber and a spherical lensed fiber) was also demonstrated by using the curved mirror. Owing to the beam waist conversion, the coupling efficiency was improved by 3.3 dB. Very flat spectral characteristics were also obtained.

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“…In our previous works, we integrated the mirrors into SiO x or SiON optical waveguides and evaluated their coupling characteristics. 8,9) With efficient optical coupling characteristics, the integrated mirrors demonstrated perfect vertical optical coupling and high compatibility with wavelength-division multiplexing (WDM) and polarization diversity, which are difficult to achieve with popular grating couplers. [10][11][12][13][14][15][16][17][18][19] The coupling loss penalty of the mirrors was approximately 0.3 dB and the wavelengthand polarization-dependent losses were less than 0.6 and 0.2 dB, respectively.…”

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confidence: 99%

“…[10][11][12][13][14][15][16][17][18][19] The coupling loss penalty of the mirrors was approximately 0.3 dB and the wavelengthand polarization-dependent losses were less than 0.6 and 0.2 dB, respectively. 8) The mirror angle was controlled with an error of less than ±1°over a wide range of more than 20°; thus, the controllability of mirror angle was sufficiently high for practical use. 9) However, our previous works were performed using only SiO x or SiON optical waveguides; Si photonic wire waveguides were not included.…”

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Mirror-based polarization-insensitive broadband vertical optical coupling for Si waveguide

Noriki

Amano

Shimura

et al. 2017

Jpn. J. Appl. Phys.

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To achieve an efficient, broadband, and polarization-insensitive vertical optical input/output for Si photonics, we demonstrated vertical optical coupling for a Si photonic wire waveguide with an integrated 45° mirror and a spot size converter. The output beam from the fabricated mirror was evaluated and a high-quality single mode beam was obtained. On the basis of coupling loss measurements, the coupling losses for the Si photonic wire waveguide were estimated to be 0.85 and 0.55 dB in TE and TM polarizations, respectively. The wavelength-dependent loss was ±0.1 dB over a wavelength range of 1500–1600 nm.

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Broadband and Polarization-Independent Efficient Vertical Optical Coupling With 45° Mirror for Optical I/O of Si Photonics

Cited by 8 publications

References 21 publications

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Beam waist controlled vertical optical path conversion using integrated curved micro mirror for silicon photonics

Mirror-based polarization-insensitive broadband vertical optical coupling for Si waveguide

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