Broadband and self-driven photodetector based on MoS2/Sb2Te3 heterojunction

Abstract

In this work, we demonstrate a Sb2Te3/MoS2 heterostructure photodetector for visible range detection or sensing applications with ultra-low dark current and high sensitivity at zero external bias. The photoresponsivity can reach to 156 mA/W at zero bias and can be enhanced 3 times at 1V bias voltage.

Exciton strain mapping in 2D TMDCs for sensing and photodetection

“…Two-dimensional transition metal dichalcogenides exhibit unique electrical, optical, mechanical, and quantum properties paving new ways toward building optoelectronic applications. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] The semiconducting nature of transition metal dichalcogenides (TMDCs) allows us to exploit the presence of bandgap for strong optical absorption using thin layers of these materials towards ultra-thin integrated devices. [16][17][18][19][20][21][22][23] The exciton wavelengths of TMDCs are spread from visible to near-infrared spectrum when mono to few layers' materials is used.…”