2010
DOI: 10.1109/jqe.2010.2052353
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Broadband Antenna-Integrated, Edge-Coupled Photomixers for Tuneable Terahertz Sources

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Cited by 21 publications
(7 citation statements)
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“…The goals are to make the simulated antenna to provide a return loss profile under ̶ 4 dB or ̶ 6 dB (as it is expected for indoor applications [10][11][12][13] and to approximate the gain of the equivalent antenna to the gain of the antenna used in experiments. For this purpose, the model shown in Fig.…”
Section: B Numerical Modeling Of Environmentmentioning
confidence: 99%
See 1 more Smart Citation
“…The goals are to make the simulated antenna to provide a return loss profile under ̶ 4 dB or ̶ 6 dB (as it is expected for indoor applications [10][11][12][13] and to approximate the gain of the equivalent antenna to the gain of the antenna used in experiments. For this purpose, the model shown in Fig.…”
Section: B Numerical Modeling Of Environmentmentioning
confidence: 99%
“…The suggested antenna has 83% return loss below -6 dB. In addition, the entire return loss profile is under -4 dB for the band of interest [12][13].…”
Section: B Numerical Modeling Of Environmentmentioning
confidence: 99%
“…We here verify the transient electron transport using a phenomenological approach by modifying the relaxation time approximation [23]. Temporal variations of electron momentum p e and energy E e are written as follows:…”
Section: Effect Of Drift Field On Minority Electron Motions In P-tmentioning
confidence: 99%
“…To relax the tradeoff between the bandwidth and efficiency of a UTC-PD, absorber structures with p-type and depleted absorber regions have been proposed. Such a PD design is called "partially depleted absorber" [20], "composite p-i-n" [22], [23] or "modified UTC-PD" [15], [16]. The electronic output interface of a PD is also very important.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6] Photomixers and pulse-driven dipolar antennas fabricated from the ultrafast photoconductive materials, such as low-temperature grown GaAs (LT-GaAs), have been regarded as promising sources for coherent terahertz radiation with large tunability. [7][8][9][10] LT-GaAs has been the dominating ultrafast material since 1990s as it features all the required properties including high resistivity, high carrier mobility and short carrier lifetime. [11][12][13][14] The excess arsenic resulting from the low growth temperature forms AsGa antisites which create deep defect levels within the GaAs bandgap.…”
Section: Introductionmentioning
confidence: 99%