Broadband CMOS Millimeter-Wave Frequency Multiplier With Vivaldi Antenna in 3-D Chip-Scale Packaging

Tripodi, L.; Hu, Xin; Götzen, Reiner; Matters-Kammerer, Marion K.; Goor, D. van; Cheng, Shi; Rydberg, Anders

doi:10.1109/tmtt.2012.2220564

Cited by 13 publications

(9 citation statements)

References 19 publications

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“…Based on a sine input signal of f in,transmit in the range of 6–20 GHz, the transmitter generates a broadband frequency comb with frequency components of multiples of the input frequency. The frequency multiplication is based on a non-linear transmission line, which was reported in [9]. As a transmission line is inherently a broadband structure, different input frequencies can be applied and will be frequency multiplied.…”

Section: Design and Layout Of The Spectrometermentioning

confidence: 99%

“…Direct detection in 150-nm CMOS up to 4.3 THz in several frequency bands is presented in [7]. In [8] the authors presented a free space continuously tuneable, fully electronic broadband heterodyne spectrometer, based on non-linear transmission line technology (NLTL) [9–11] and its application to bacteria detection, but the frequency range was limited to 20 to 220 GHz. In [12] a heterodyne spectrometer, where the transmitter and receiver are both integrated on one 65-nm CMOS chip was presented by the authors.…”

Section: Introductionmentioning

confidence: 99%

“…Focus of this paper is the broadband sampler used in the receiver of the spectrometer. Further information on the broadband transmitter can be found in [9].…”

Section: Introductionmentioning

confidence: 99%

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Broadband sub-THz spectroscopy modules integrated in 65-nm CMOS technology

Matters-Kammerer¹,

Goor

Tripodi

2017

Int. J. Microw. Wireless Technol.

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The design and characterization of a broadband 20–480 GHz continuously tuneable on-chip spectrometer based on non-linear transmission lines in 65-nm CMOS technology is presented. The design procedure of the sampler that detects the ultra-broadband signal from the transmitter in time and frequency domain is described in detail. It consists of a non-linear transmission line, a passive pulse differentiator and a high-speed sample and hold-circuit. The relevance of the layout of the Schottky diodes in the sampler with a maximum RC-cutoff frequency of 430 GHz is described. Time domain and frequency domain measurements are presented to characterize the 480 GHz sampler bandwidth as well as the 3.1 ps sampler rise time. A signal to noise ratio of 90 dB at 100 GHz, 70 dB at 200 GHz and more than 30 dB at 480 GHz is reached. Two implementation of the spectrometer with antennas are presented, one with an on-chip antenna and one in a hybrid package. The antenna-less on-chip implementation of the transmitter and sampler requires no external lenses and is miniaturized to an area of 3 mm2. Future applications include analysis of fluids in microfluidic packages or droplet analysis in bio-medical or pharmaceutical applications.

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Section: Design and Layout Of The Spectrometermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Broadband sub-THz spectroscopy modules integrated in 65-nm CMOS technology

Matters-Kammerer¹,

Goor

Tripodi

2017

Int. J. Microw. Wireless Technol.

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“…In the receiver, another nonlinear transmission line (NLTL) Advances in Electronics mixes back these THz frequencies to "normal" frequencies that fit again in the bounded frequency domain of the technology. By this way we have created an on-chip THz spectrometer with frequencies far above the "boundary max " of the technology [14]. Another application of nonlinear transformations is shown in Figure 10.…”

Section: Matching-based Designmentioning

confidence: 99%

Shifting the Frontiers of Analog and Mixed-Signal Electronics

Roermund

2014

Advances in Electronics

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Nowadays, analog and mixed-signal (AMS) IC designs, mainly found in the frontends of large ICs, are highly dedicated, complex, and costly. They form a bottleneck in the communication with the outside world, determine an upper bound in quality, yield, and flexibility for the IC, and require a significant part of the power dissipation. Operating very close to physical limits, serious boundaries are faced. This paper relates, from a high-level point of view, these boundaries to the Shannon channel capacity and shows how the AMS circuitry forms a matching link in transforming the external analog signals, optimized for the communication medium, to the optimal on-chip signal representation, the digital one, for the IC medium. The signals in the AMS part itself are consequently not optimally matched to the IC medium. To further shift the frontiers of AMS design, a matching-driven design approach is crucial for AMS. Four levels will be addressed: technology-driven, states-driven, redundancy-driven, and nature-driven design. This is done based on an analysis of the various classes of AMS signals and their specific properties, seen from the angle of redundancy. This generic, but abstract way of looking at the design process will be substantiated with many specific examples.

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“…Thanks to the lithography process, the lines have higher precision, which can reach 1 um level. The thin silicon substrate with shorter filled copper throughsilicon vias (TSVs) can achieve high RF performance and high packaging density [6][7][8]. Since the coefficients of thermal expansion of silicon and devices are matched, various ICs are fit to assemble onto the substrate.…”

Section: Introductionmentioning

confidence: 99%

A Miniaturized Multi-Channel Tr Module Design Based on Silicon Substrate

Zhou¹,

Yang²,

Zhao³

et al. 2018

PIER Letters

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The block diagram of a TR (Transmit Receive) module that consists of four channels using a silicon substrate is presented in this paper. The silicon substrate fabricated by microelectronic process has been adopted to increase the interconnect density of module. Several broadband vertical transitions are simulated and optimized by electromagnetic simulator. The vertical transition works well from DC to 40 GHz. The insertion loss is less than 1 dB, and the return loss is better than −15 dB in back-to-back configuration. A novel TR module based on the silicon substrate is proposed for its miniaturization and high integration advantages. The module occupies a compact area of 30 mm × 20 mm × 1.8 mm, and the weight is 1.77 g.

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Broadband CMOS Millimeter-Wave Frequency Multiplier With Vivaldi Antenna in 3-D Chip-Scale Packaging

Cited by 13 publications

References 19 publications

Broadband sub-THz spectroscopy modules integrated in 65-nm CMOS technology

Broadband sub-THz spectroscopy modules integrated in 65-nm CMOS technology

Shifting the Frontiers of Analog and Mixed-Signal Electronics

A Miniaturized Multi-Channel Tr Module Design Based on Silicon Substrate

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