We deduce the intrinsic conductivity properties of the ferroelectric domain walls around the topologically protected domain vortex cores in multiferroic YMnO3. This is achieved by performing a careful equivalent-circuit analysis of dielectric spectra measured in single-crystalline samples with different vortex densities. The conductivity contrast between the bulk domains and the less conducting domain boundaries is revealed to reach up to a factor 500 at room temperature, depending on sample preparation. Tunneling of localized defect charge carriers is the dominant charge-transport process in the domain walls that are depleted of mobile charge carriers. This work demonstrates that via equivalent-circuit analysis, dielectric spectroscopy can provide valuable information on the intrinsic charge-transport properties of ferroelectric domain walls, which is of high relevance for the design of new domain-wall-based microelectronic devices.The hexagonal manganites RMnO3 (R = Sc, Y, In, and Dy-Lu) form a unique group of multiferroics where a geometrically-driven mechanism triggers improper ferroelectricity [1]. Additional interest in this material class arose from the reported occurrence of vortex-like ferroelectric domain patterns [2,3,4]. Around the vortex cores, forming the centers of "cloverleaf" patterns of six domains, the polarization changes sign six times. These cores, evolving at a high-temperature structural transition [5], represent stable topological defects. Even strong electric fields only lead to a variation of ferroelectric domain sizes in these materials, but are unable to completely eradicate unfavorable domains and to generate a mono-domain state [2,6]. Moreover, there is a strict coupling of ferroelectric and antiferromagnetic domain walls (DWs), the latter forming at much lower temperatures around 100 K [7].Recently it was shown that these complex domain properties also may be of relevance from an application point of view: Conductive atomic-force microscopy (c-AFM) on ErMnO3 [4] and HoMnO3 [8] revealed that the conductance of the ferroelectric DWs is either enhanced or suppressed compared to the domains, being determined by the polarization orientation of the adjacent domains. As the DWs can be easily tuned by external fields, this opens the possibility of domain-boundary engineering and applications in microelectronics using the nanoscale DWs instead of the domains themselves as active device elements [9,10,11,12,13]. The hexagonal manganites seem especially suited for this kind of functionality: Their DWs are robust and represent persistent interfaces as they are attached to the vortex cores, but within these constraints they can be moved by an external field thus enabling switching [4,12,13].In general, insulating domain walls, also observed in various other systems as SrMnO3 thin films [14] and (Ca,Sr)3Ti2O7 [15], have shifted into the focus of interest, due to their possible applications, e.g., as rewritable nanocapacitors. The conductivity contrast between these DWs and the domains should be...