Broadband inductance modeling of TXVs for 3D interconnection

Liu, Yang; Zhu, Zhangming; Liu, Xiaoxian; Guo, Lixin; Yang, Yintang

doi:10.1016/j.mejo.2019.04.010

Cited by 4 publications

(2 citation statements)

References 10 publications

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“…Substituting (12) into (9) we obtain the following expression for the frequency-dependent dielectric loss term:…”

Section: Model Parameters Contributing To Dielectric Attenuationmentioning

confidence: 99%

“…As serial data‐rates have continued to climb over time we have witnessed a necessary increase in attention given to the signal degradation introduced by ever smaller interconnect structures, starting at the PCB level [7, 8], with a later focus moving to the packaging [8, 9], and more recently to on‐chip structures in the higher metal levels where the

R^{'} / L^{'}

transition frequencies now fall within transmission signal bandwidth and consequently analysis no longer yields to a simpler distributed RC model approach [10–15]. In the case of such small structures operating at sufficiently high frequencies it is apparent that they must be treated as sub‐miniature transmission lines, and whereas for such structures the classical equations will generally be found to be sufficiently accurate over a wide range of operating frequency, nevertheless, as signal frequencies continue to increase these small structures can also be anticipated to require a correction applied to the classical equations for the same high‐frequency effects as described earlier.…”

Section: Classical‐compact Hybrid Modelmentioning

confidence: 99%

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Approach to modelling uniform transmission lines for broadband high‐frequency applications

Webster

2020

IET Circuits, Devices & Systems

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A novel high-frequency lossy uniform transmission line model is presented in this study. Novel features include a compactness of form and a level of simplicity that confers enhanced simulation efficiency in practical applications. Although specifically developed to target implementation in generic versions of SPICE, the compact high-frequency model can be implemented using only four lines of netlist syntax in the case of circuit simulators that offer native Laplace equation support. Featuring a broadband frequency response characteristic that is defined by only four parameters, the compact HF model is based on a novel theoretical approach that elegantly connects the four model parameters to physical line parameters using only elementary line characterisation data. Important and perhaps surprising differences between the new model theory and classical textbook theory are highlighted and discussed. The lessons learned are then incorporated into a second hybrid model featuring a higher level of complexity that combines both new and classical theoretical approaches into a single set of model equations that are better suited for atypically small controlled impedance structures such as silicon interposers and on-chip clock and data distribution schemes.

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“…Substituting (12) into (9) we obtain the following expression for the frequency-dependent dielectric loss term:…”

Section: Model Parameters Contributing To Dielectric Attenuationmentioning

confidence: 99%