Broadband light absorption enhancement in nanoporous black silicon synthesized by aluminium-catalyzed chemical etching

Uddin, Shahnawaz; Hashim, M.R.; Pakhuruddin, Mohd Zamir

doi:10.1016/j.optmat.2022.113111

Cited by 5 publications

(1 citation statement)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We attribute this observation to the expansion of the pore diameters to reach 5 µm and the degradation of the PS bottom layer forming an overlapped structure as shown in Figure 1 k,l limiting, as a result, the light scattering on the pore sidewalls. It is noteworthy that the reflectivity values of our samples obtained using VP-Ag-ACE are less than the previously reported values in the following references [ 9 , 19 ], which prove the effectiveness of the PS layer elaborated with VP-Ag-ACE for photovoltaic applications.…”

Section: Resultscontrasting

confidence: 46%

Elaboration of Silicon Nanostructures with Vapor-Phase Silver Assisted Chemical Etching: Correlation between Structural and Optical Properties

2023

View full text Add to dashboard Cite

Based on the widely used wet metal-assisted electroless etching, we develop in this work a novel vapor-phase silver-assisted chemical etching (VP-Ag-ACE) suitable for the elaboration of highly doped p-silicon (Si) nanostructures with strong, visible, and multi-peak photoluminescence (PL) emissions. The lateral and vertical etching rates (LER and VER) were discussed based on the etching mechanism of the VP-Ag-ACE. The antireflective suitability of the vapor-etched layer has been evaluated by a reflectivity measurement and exhibits reflectivity values lower than 3%. The PL emission at both room and low temperatures emissions were deeply discussed and correlated with the structural properties of the Si morphologies and their surface states based on the FTIR results.

show abstract

Section: Resultscontrasting

confidence: 46%