We investigate the effect of surface
modification of CdSe/ZnS quantum
dots (QDs) with bis(imino)pyridine (BIP) ligands. BIPs are a class
of redox noninnocent ligands known to facilitate charge transfer in
base metals on the molecular scale, but their behavior in nano- to
mesoscale systems has been largely unexplored. Using electron microscopy,
crystallography, and ultrafast spectroscopy, we reveal that structure-specific
π–π stacking of the BIP molecules alters interdot
separation in QD films, thereby leading to changes in optical and
electronic properties. The three variations used are unsubstituted
(BIP-H), dimethyl (BIP-Me), and diisopropyl (BIP-Ipr) BIP, and when
compared with the native octadecylamine ligand, we find that both
energy and charge transfer efficiencies between QDs are increased
postligand exchange, the highest achieved through BIP-Ipr despite
its larger unit cell volume. We further investigate charge transfer
from QD films to conducting (indium tin oxide, ITO) and semiconducting
(zinc oxide, ZnO) substrates using time-resolved spectroscopy and
determine that the influence of the ligands is QD band gap-dependent.
In QDs with a large band gap (2.3 eV), the BIP ligands facilitate
charge transfer to both ITO and ZnO substrates, but in dots with a
small band gap (1.9 eV), they pose a hindrance when ZnO is used, resulting
in reduced recombination rates. These results highlight the importance
of investigating multiple avenues in order to optimize surface modification
of QDs based on the end goal. Finally, we verify that BIP ligands
hasten the rate of QD photobrightening under continuous illumination,
allowing the ensemble to achieve stable emission faster than in their
native configuration. Our study sets the stage for novel charge transfer
systems in the meso- and nanoscale, yielding a diverse selection of
new surface ligands for applications such as conductive materials
and energy production/storage devices employing QDs.