Broadband mid-infrared superlattice light-emitting diodes

Ricker, Russell J.; Provence, Sydney; Norton, Dennis; Boggess, Thomas F.; Prineas, J. P.

doi:10.1063/1.4983023

Cited by 25 publications

(15 citation statements)

References 28 publications

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“…For 50% duty cycle, later devices with 4.1 µm peak wavelength and 520 µm × 520 µm area emitted 0.8 mW (0.30 W/cm 2 ) at room temperature (11 mW, 4.1 W/cm 2 , with maximum WPE ≈ 1% at 77 K) [183], and > 600 µW (0.022 W/cm 2 ), WPE = 0.036%, at 77 K for devices with 8.6 µm peak wavelength [184]. U. Iowa [185] broadened the ICLED emission spectrum by using tunnel junctions to connect active regions with different bandgaps. U. Glasgow also combined different mid-IR bandgaps, but with separate contacts to each emission region [186].…”

Section: Interband Cascade Ledsmentioning

confidence: 99%

The Interband Cascade Laser

et al. 2020

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We review the history, development, design principles, experimental operating characteristics, and specialized architectures of interband cascade lasers for the mid-wave infrared spectral region. We discuss the present understanding of the mechanisms limiting the ICL performance and provide a perspective on the potential for future improvements. Such device properties as the threshold current and power densities, continuous-wave output power, and wall-plug efficiency are compared with those of the quantum cascade laser. Newer device classes such as ICL frequency combs, interband cascade vertical-cavity surface-emitting lasers, interband cascade LEDs, interband cascade detectors, and integrated ICLs are reviewed for the first time.

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Section: Interband Cascade Ledsmentioning

confidence: 99%

The Interband Cascade Laser

et al. 2020

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“…The active region typically contains an alternating sequence of two layers repeated ∼10-30 times, resulting in a total thickness of ∼100-200 nm. As described below, separate pn junctions with differently designed active regions can be cascaded to enable broadband IR light emission [127]. The pn-junction devices described here typically have a low turn-on voltage (<1 V) due to their relatively low bandgap energies.…”

Section: Type-ii Superlattice-based Mid-ir Emitters On Inas and Gasb mentioning

confidence: 99%

“…At low current, emission from the individual stages can be clearly resolved, and at high current, the peaks merge into a broad spectrum. Reprinted from [127], with the permission of AIP Publishing. room temperature lasing out to 2.71 μm from GaSbBi/GaSb quantum well lasers shown in figure 16 [172].…”

Section: Highly Mismatched Alloys For Band Engineeringmentioning

confidence: 99%

Next-generation mid-infrared sources

Jung

Bank

Lee

et al. 2017

J. Opt.

145

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The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital applications in molecular sensing, security and defense, energy conservation, and potentially in free-space communication. The recent development and rapid commercialization of new coherent mid-infrared sources have spurred significant interest in the development of mid-infrared optical systems for the above applications. However, optical systems designers still do not have the extensive optical infrastructure available to them that exists at shorter wavelengths (for instance, in the visible and near-IR/telecom wavelengths). Even in the field of optoelectronic sources, which has largely driven the growing interest in the mid-infrared, the inherent limitations of state-of-the-art sources and the gaps in spectral coverage offer opportunities for the development of new classes of lasers, light emitting diodes and emitters for a range of potential applications. In this topical review, we will first present an overview of the current state-of-the-art mid-IR sources, in particular thermal emitters, which have long been utilized, and the relatively new quantum-and interband-cascade lasers, as well as the applications served by these sources. Subsequently, we will discuss potential midinfrared applications and wavelength ranges which are poorly served by the current stable of mid-IR sources, with an emphasis on understanding the fundamental limitations of the current source technology. The bulk of the manuscript will then explore both past and recent developments in midinfrared source technology, including narrow bandgap quantum well lasers, type-I and type-II quantum dot materials, type-II superlattices, highly mismatched alloys, lead-salts and transitionmetal-doped II-VI materials. We will discuss both the advantages and limitations of each of the above material systems, as well as the potential new applications which they might serve. All in all, this topical review does not aim to provide a survey of the current state of the art for mid-IR sources, but instead looks primarily to provide a picture of potential next-generation optical and optoelectronic materials systems for mid-IR light generation.

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“…The gas-filled LVOF is to be integrated with a miniaturized mid-infrared emitter and a dedicated collimator that together fulfill the requirements of the light source. Since collimation is more effective as the emitter becomes smaller, a mid-infrared light-emitting diode (LED) enables an efficient collimation due to its high-throughput per unit emission area [ 29 , 30 , 31 ]. Combined with an aspheric [ 32 ] or a parabolic collimator [ 33 ], an LED-based light source would be compatible with the requirements of the gas-filled LVOF.…”

Section: Resultsmentioning

confidence: 99%

Functionalizing a Tapered Microcavity as a Gas Cell for On-Chip Mid-Infrared Absorption Spectroscopy

Ayerden

Mandon

Harren

et al. 2017

Sensors

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Increasing demand for field instruments designed to measure gas composition has strongly promoted the development of robust, miniaturized and low-cost handheld absorption spectrometers in the mid-infrared. Efforts thus far have focused on miniaturizing individual components. However, the optical absorption path that the light beam travels through the sample defines the length of the gas cell and has so far limited miniaturization. Here, we present a functionally integrated linear variable optical filter and gas cell, where the sample to be measured is fed through the resonator cavity of the filter. By using multiple reflections from the mirrors on each side of the cavity, the optical absorption path is elongated from the physical sans-serifμnormalm-level to the effective normalmnormalm-level. The device is batch-fabricated at the wafer level in a CMOS-compatible approach. The optical performance is analyzed using the Fizeau interferometer model and demonstrated with actual gas measurements.

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Broadband mid-infrared superlattice light-emitting diodes

Cited by 25 publications

References 28 publications

The Interband Cascade Laser

The Interband Cascade Laser

Next-generation mid-infrared sources

Functionalizing a Tapered Microcavity as a Gas Cell for On-Chip Mid-Infrared Absorption Spectroscopy

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