Broadband Monolithic Digital Attenuator for X-Band Phased Array

Radchenko, Andriy; Radchenko, V. V.; Kistchinsky, A.; Buterin, A.V.

doi:10.1109/crmico.2006.256361

2006 16th International Crimean Microwave and Telecommunication Technology 2006

DOI: 10.1109/crmico.2006.256361

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Broadband Monolithic Digital Attenuator for X-Band Phased Array

Andriy Radchenko¹,

V. V. Radchenko²,

A. Kistchinsky³

et al.

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2012

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“…Most monolithic microwave integrated circuit (MMIC)-based attenuators have been developed by using a GaAs-based FET technology for military applications. However, owing to limitations of the device performance, the RF characteristics and bandwidth are restricted [3][4][5]. From this standpoint, pin diodes with optimised junction areas have been used with better performance characteristics over FET devices in terms of high switching cutoff frequency, small distortion and high power handling capability [6,7].…”

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Broadband compact InGaAs pin 5-bit digital attenuator using π-type resistive network

Yang¹,

Yang²

2012

Electron. Lett.

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A broadband compact InGaAs pin 5-bit digital attenuator using a p-type resistive network is demonstrated. The proposed 5-bit digital attenuator is composed of p-type resistive networks for good input/ output matching and accurate attenuation characteristics. The fabricated attenuator MMIC has good performance characteristics, such as an insertion loss less than 11.5 dB and a small RMS amplitude error of 2.3 dB at the broadband frequency range of 7 -40 GHz. In addition, the overall chip size, which is significantly reduced by using the developed multilayer structure, is only 1.59 × 0.84 mm 2 .Introduction: An attenuator is a network that reduces input power by a predetermined ratio while matching input and output impedances. Microwave attenuators have been widely used in high-frequency communication systems such as automotive collision avoidance, optical communication, and phased-array radar applications [1,2]. Most monolithic microwave integrated circuit (MMIC)-based attenuators have been developed by using a GaAs-based FET technology for military applications. However, owing to limitations of the device performance, the RF characteristics and bandwidth are restricted [3][4][5]. From this standpoint, pin diodes with optimised junction areas have been used with better performance characteristics over FET devices in terms of high switching cutoff frequency, small distortion and high power handling capability [6,7]. In addition, InGaAs pin diodes based on InP-based material systems have several advantageous features, such as low turn-on voltage, fast switching time, and good RF performance [8].In this work, a broadband InGaAs pin 5-bit digital attenuator using a p-type network has been designed and fabricated. Based on the circuit schematic of a p-type resistive network, the operating principle of the proposed InGaAs pin diode based attenuator is discussed. The attenuator MMIC has been implemented by using a BCB-based multilayer MMIC technology and its microwave performance has been characterised by on-wafer test setups.

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confidence: 99%

Broadband compact InGaAs pin 5-bit digital attenuator using π-type resistive network

Yang¹,

Yang²

2012

Electron. Lett.

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Broadband Monolithic Digital Attenuator for X-Band Phased Array

Cited by 1 publication

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Broadband compact InGaAs pin 5-bit digital attenuator using π-type resistive network

Broadband compact InGaAs pin 5-bit digital attenuator using π-type resistive network

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