Broadband perfect light trapping in the thinnest monolayer graphene-MoS2 photovoltaic cell: the new application of spectrum-splitting structure

Abstract

The light absorption of a monolayer graphene-molybdenum disulfide photovoltaic (GM-PV) cell in a wedge-shaped microcavity with a spectrum-splitting structure is investigated theoretically. The GM-PV cell, which is three times thinner than the traditional photovoltaic cell, exhibits up to 98% light absorptance in a wide wavelength range. This rate exceeds the fundamental limit of nanophotonic light trapping in solar cells. The effects of defect layer thickness, GM-PV cell position in the microcavity, incident angle, and lens aberration on the light absorptance of the GM-PV cell are explored. Despite these effects, the GM-PV cell can still achieve at least 90% light absorptance with the current technology. Our proposal provides different methods to design light-trapping structures and apply spectrum-splitting systems.

Dual-Gated WTe2/MoSe2 van der Waals Tandem Solar Cells

“…We assume photogeneration rates corresponding to an illumination of 1 sun and to the high broadband absorptance attainable by embedding the cells in a wedge-shaped microcavity. 6 The current-voltage characteristics of the two subcells are reported in Fig. 4 For high V , up to V oc , V G is adjusted so that J WTe 2 and J MoSe 2 remain equal.…”

Greatly enhanced light emission of MoS2 using photonic crystal heterojunction

“…To model the absorption of MoS 2 in this structure, the transfer matrix method is used first 46 , 22 . In the l -th layer, the electric field of the TE mode light beam with incident angle θ t is given by where k l = k lr + ik li is the wave vector of the incident light, e z is the unit vectors in the z direction, and x i is the position of the l -th layer in the x direction.…”

Photoresponsivity of an all-semimetal heterostructure based on graphene and WTe2

“…mono-atomic thickness, universal optical absorption and gate tunable Fermi level, a variety of remarkable optoelectronic devices have been demonstrated by forming different types of graphene heterostructures. For instance, stacking graphene with semiconductors can form a versatile Schottky-type metal-semiconductor junction that is widely used in photodetection, solar energy collection and Schottky diode, etc 22 – 26 . Graphene-hexagonal boron nitride (hBN) heterostructure, as a paradigm of semimetal-insulator junction, offers a huge potential application in the fabrication of atomically thin field-effect transistors, resonant tunneling transistors and diodes 27 – 29 .…”