Van der Waals (vdW) heterostructures are promising for
next-generation
two-dimensional electronic and optoelectronic devices. The performance
of such devices is completely determined by the properties of the
interface. However, due to a lack of contamination-free fabrication
techniques, obtaining an ideal interface is still a challenge. Meanwhile,
the efficiency of photodetectors and solar cells is highly dependent
on the charge separation on the interface. Thus, the questions on
the effect of interfacial conditions on a contact type, charge redistribution,
and photoluminescence still exist. In this work, the effect of interfacial
conditions on the optical and electronic properties of MoSe2/Au heterostructure is studied. The tip of an atomic force microscope
is used to clean the interface and change interfacial conditions.
Kelvin probe microscopy revealed that the work function of the MoSe2 monolayer increases by 40 meV, the bilayer by 28 meV, and
the trilayer by 12 meV due to charge redistribution after the cleaning.
Micro-photoluminescence (μ-PL) investigation shows that the
cleaning leads to the fall of photoluminescence intensity of about
75% for a monolayer and 60% for a bilayer. Raman spectroscopy indicates
that the cleaning procedure did not damage the MoSe2 flake.
It is shown that the presence of interfacial contamination in vdW
heterostructures severely affects its electronic and optical properties.
The results of the work are of great importance to vdW device fabrication.