Broadband polarization-selective uncooled infrared sensors using tapered plasmonic micrograting absorbers

Ogawa, Shinpei; Takagawa, Yousuke; Kimata, Masafumi

doi:10.1016/j.sna.2017.12.029

Cited by 27 publications

(18 citation statements)

References 32 publications

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“…e-beam, standard UV, deep UV (DUV) and direct laser writing (DLW) lithography. There are two notable state-of-the-art metamaterial absorbers centered at mid-IR and fabricated using standard UV [40,43]. Ogawa et.…”

Section: Resultsmentioning

confidence: 99%

“…al. [40] have used a plasmonic micrograting absorber (PMGA) to achieve wideband absorption by controlling the depth and tapering angle of the micrograting. Using this method, they were able to implement a larger unit cell and achieve wideband absorption for wavelengths as short as 4 μm.…”

Section: Resultsmentioning

confidence: 99%

“…10. The typical unit-cell and center wavelength for the state of the art mid-infrared metamaterial absorbers, fabricated using e-beam [22][23][24][25][29][30][31][32][33][34][35][36][37], standard UV [39][40][41][42][43], Deep UV (DUV) [21], and direct laser writing (DLW) [38] lithography methods. The metamaterial structure presented in this paper is also shown for comparison.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, the level of masked lithography that is a standard part of the infrastructure of a MEMS cleanroom (masked UV (i-line) lithography) has been explored for mid-infrared absorber fabrication. Analyzing literature on mid-infrared metamaterial-based absorbers reveals that the dividing line between e-beam fabricated, versus mask-fabricated devices is at the longer wavelength part of the IR spectrum [39][40][41][42][43]. For a typical mid-infrared design based on the cross and split-ring resonators, a feature size of about 80 nm (at 1 μm) [34] up to 400 nm (at 6 μm) [22] is required, which is beyond the specifications of masked UV lithography.…”

Section: Cmos-compatibility Design In Mid-ir Metamaterials Absorbersmentioning

confidence: 99%

See 3 more Smart Citations

CMOS-compatible mid-IR metamaterial absorbers for out-of-band suppression in optical MEMS

Ghaderi¹,

Shahmarvandi²,

Wolffenbuttel³

2018

Opt. Mater. Express

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show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Cmos-compatibility Design In Mid-ir Metamaterials Absorbersmentioning

confidence: 99%

See 2 more Smart Citations

CMOS-compatible mid-IR metamaterial absorbers for out-of-band suppression in optical MEMS

Ghaderi¹,

Shahmarvandi²,

Wolffenbuttel³

2018

Opt. Mater. Express

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show abstract

“…Such asymmetric 2D plasmonic absorber shows sufficient absorption when the electric field of the incident radiation is perpendicular to the major axis of the elliptical dimple, while it does not absorb incident radiation with its electric field parallel to the major axis. The author also demonstrated another approach by replacing 2D periodic dimples with 1D gratings (Figure c) . In addition to polarization selectivity, broadband absorption was realized by increasing the grating depth.…”

Section: Metamaterials Enhanced Physical Sensorsmentioning

confidence: 99%

Leveraging of MEMS Technologies for Optical Metamaterials Applications

Ren

Chang

et al. 2019

Advanced Optical Materials

178

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Tunable metamaterial devices have experienced explosive growth in the past decades, driving the traditional electromagnetic (EM) devices to evolve into diversified functionalities by manipulating EM properties such as amplitude, frequency, phase, polarization, and propagation direction. However, one of the bottlenecks of these rapidly developed metamaterials technologies is limited tunability caused by the intrinsic frequency‐dependent property of exotic tunable material. To overcome such limitation, the microelectromechanical system (MEMS) enabling micro/nanoscale manipulation is developed to actively control “meta‐atom” in terahertz and infrared region, which brings frequency‐scalable tunability and complementary metal‐oxide‐semiconductor‐compatible functional meta‐devices. Beyond tunability, novel chemical sensing platforms of molecular identification and dynamic monitoring of the biochemical process can be achieved by integrating micro/nanofluidics channels with metamaterial resonators. Additionally, incorporating metamaterial absorbers with MEMS resonators brings another research interest in MEMS zero‐power devices and radiation sensors. Furthermore, moving from 2D metasurfaces to 3D metamaterials, enhanced EM properties like novel resonance mode, giant chirality, and 3D manipulation reinforce the application in biochemical and physical sensors as well as functional meta‐devices, paving the way to realize multi‐functional sensing and signal processing on a hybrid smart‐sensor microsystem for booming healthcare, environmental monitoring, and the Internet of Things applications.

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Wavelength-dependent near-infrared microbolometer for short-wavelength infrared light with gold nanowire grating optical absorber

et al. 2020

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Near-infrared (NIR) imaging has been used for nondestructive and non-contact inspections in various areas, such as food and medicine inspections and medical diagnoses. The short-wavelength infrared light (SWIR) sensor currently used requires a Peltier cooler and a diffraction grating spectroscope owing to its detection principle. Thus, realizing a lowcost and miniaturized SWIR imaging device remains challenging and has limitations for practical applications. In this study, we propose a bolometer-type detector element fabricated using a silicon-on-insulator (SOI) wafer as a low cost and miniaturized SWIR image sensor element. We adopted gold (Au) nanowire grating structures coated with silicon as wavelength-dependent SWIR absorbers and aimed at wavelength-selectivity imaging without using a spectroscope. A device was designed and fabricated with Au nanowire grating structures on a doubly clamped Si beam using microelectromechanical system (MEMS)) technology. The electrical characteristics of the device were measured depending on device temperature and SWIR irradiation intensity. It was found that electrical resistance decreased linearly with increasing device temperature and SWIR irradiation intensity (wavelength at 1530 nm), as semiconductors have negative temperature coefficients of resistance. The results show similar trends from both finite element method (FEM) analysis and theoretical calculation. The resistances at wavelengths ranging from 1530 to 1565 nm at 5 nm increment were evaluated. It was confirmed that absorber-integrated bolometer device enabled wavelength-dependent response of the resistance according to the absorption spectrum.

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Broadband polarization-selective uncooled infrared sensors using tapered plasmonic micrograting absorbers

Cited by 27 publications

References 32 publications

CMOS-compatible mid-IR metamaterial absorbers for out-of-band suppression in optical MEMS

CMOS-compatible mid-IR metamaterial absorbers for out-of-band suppression in optical MEMS

Leveraging of MEMS Technologies for Optical Metamaterials Applications

Wavelength-dependent near-infrared microbolometer for short-wavelength infrared light with gold nanowire grating optical absorber

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