Broadband radiation sources based on quantum-well superluminescent diodes emitting at 1550 nm

Mamedov, D S; Прохоров, В. В.; Yakubovich, S D

doi:10.1070/qe2003v033n06abeh002427

Cited by 12 publications

(5 citation statements)

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“…The peaks at approximately 28.6, 34.7, and 34.9° corresponded to the (111) diffraction peak of Si and the (0002) peaks of GaN and AlN films, respectively. , Figure e shows the Raman spectra of the samples. E 2 (high) phonon modes at 569.1 cm –1 of GaN, , and 521 cm –1 phonon frequencies due to the underlying Si, are observed. All of these features fit well with the epitaxial wafer structure in Figure g.…”

Section: Results and Discussionmentioning

confidence: 89%

Si-Based GaN Light-Emitting Diodes with MoS₂ Nanosheet-Decorated Fabry–Perot Waveguide Structure

Qin,

Cao,

et al. 2023

ACS Appl. Nano Mater.

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III−V semiconductor light-emitting diodes (LEDs) on Si substrates, suitable for large-scale and large-wafer-size manufacturing, are a convenient option for on-chip light sources. Here, we present the design and fabrication of a MoS 2 nanosheetdecorated InGaN/AlGaN/GaN LED on a Si substrate with a Fabry−Perot waveguide, utilizing standard microfabrication processes. We assess the voltage−current characteristics, electroluminescence (EL) properties, polarization properties, chrominance, and surface temperature of the device. The MoS 2 layer's spectrum filtering effect and the waveguide's interference effect influence the EL properties of GaN LED. The MoS 2 -decorated LED device presented different properties than the bare LED in terms of a higher turn-on voltage, uniform emission pattern, lower surface temperature, and higher polarizability. Besides, the underlying mechanism for spectral modulation is studied. The MoS 2decorated device demonstrates an EL peak near 417 nm, with a high side mode suppression ratio and full width at half-maximum (FWHM) < 1 nm. Our study offers insights into the potential realization of light sources with narrowed spectra using GaN LEDs based on Si materials.

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Section: Results and Discussionmentioning

confidence: 89%

Si-Based GaN Light-Emitting Diodes with MoS₂ Nanosheet-Decorated Fabry–Perot Waveguide Structure

Qin,

Cao,

et al. 2023

ACS Appl. Nano Mater.

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show abstract

“…It is well known that SLDs (SOAs) based on quantum-well heterostructures may exhibit significantly wider ASE spectrum [6][7][8] . It is obvious that using SLD and SOA based on the appropriate heterostructures it is possible to obtain in the same design much broader spectrum (lower coherence) of the output emission.…”

Section: Resultsmentioning

confidence: 99%

Broadband high-brightness light sources based on semiconductor optical amplifier and superluminescent diode

Prokhorov¹,

Shvakov²,

Yakubovich³

2005

SPIE Proceedings

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It is experimentally shown that a semiconductor optical amplifier (SOA) ensures a significant improvement of output characteristics of a superluminescent diode (SLD). Using SOA based on (InGa)PAs SC DH (central wavelength -1300 nm) in MOPA system with SLD as a master oscillator a CW output power of 50 mw ex SM fiber was obtained. The same SOA used as a combiner of its own ASE and red-shifted input SLD light signal permits obtaining the output emission with linewidth near 70 nm.

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“…Due to the extended penetration depths in tissue with increasing wavelength [131, 132], these lasers have served as broad bandwidth sources for optical coherence tomography [133], though for this application they have largely been replaced by relatively inexpensive continuous wave superluminescent diodes [134, 135]. Continuous wave Cr 4+ :Forsterite lasers have also been employed as an early wavelength swept source for OCT, using prisms to disperse the spectrum and allow only a narrow bandwidth to experience intra-cavity gain at any given point in time [136].…”

Section: Ultrafast Lasers In Imagingmentioning

confidence: 99%

Laser applications and system considerations in ocular imaging

Elsner¹,

Muller

2008

Laser & Photonics Reviews

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We review laser applications for primarily in vivo ocular imaging techniques, describing their constraints based on biological tissue properties, safety, and the performance of the imaging system. We discuss the need for cost effective sources with practical wavelength tuning capabilities for spectral studies. Techniques to probe the pathological changes of layers beneath the highly scattering retina and diagnose the onset of various eye diseases are described. The recent development of several optical coherence tomography based systems for functional ocular imaging is reviewed, as well as linear and nonlinear ocular imaging techniques performed with ultrafast lasers, emphasizing recent source developments and methods to enhance imaging contrast. KeywordsRetinal imaging; confocal imaging; Vertical Cavity Surface Emitting Laser (VCSEL); Adaptive Optics; OCT (Optical Coherence Tomography); swept source lasers; ultrafast lasers; nonlinear interactions INTRODUCTONImaging of the eye presents several optical challenges, of which only some are found in microscopy. Millions of neural cells, together with their metabolic support structures, line the inside of the eyeball, forming the retina [1]. Figure 1 shows the large scale view of the eye in cross section, and Figure 2 shows detail of the layers of the retina.The healthy eye must be relatively transparent over a distance of roughly 22 mm, from cornea to retina, to permit the transmission of light to the photoreceptors, which are the neurons that Ann E. Elsner has been a Professor at the Indiana University School of Optometry since 2005 and serves as Director of the Borish Center for Ophthalmic Research. From 1987 until 2005, she was at the Schepens Eye Research Institute, an affiliate of Harvard Medical School, where she served as the group head in Vision and Visual Optics. She is known for the novel application of lasers as sources in imaging and display devices. The applications of the imaging devices are focused on discovering the pathophysiology of diseases of the retina, as well as probing visual function throughout the lifespan. By determining the optical signature of pathological states that are important in patient management, she then develops optical techniques that maximize the chance to detect damage due to disease, with a view towards wide applicability and low cost. She is best known for her retinal imaging work with near infrared sources, polarized light, and image processing techniques that use multiply scattered light to provide improved detection of pathology. Dr. Elsner is a Fellow of the Optical Society of America, and a Fellow of the American Academy of Optometry. She serves as an Associate Editor for Investigative Ophthalmology and Vision Science. She is an author or co-author on more than 75 papers in refereed journals, and over 150 published abstracts from major scientific meetings. Matthew S. Muller has been an Optical Engineer at the Indiana University School of Optometry since January, 2008. He received his Master's of Science (Engin...

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Broadband radiation sources based on quantum-well superluminescent diodes emitting at 1550 nm

Cited by 12 publications

References 1 publication

Si-Based GaN Light-Emitting Diodes with MoS₂ Nanosheet-Decorated Fabry–Perot Waveguide Structure

Si-Based GaN Light-Emitting Diodes with MoS₂ Nanosheet-Decorated Fabry–Perot Waveguide Structure

Broadband high-brightness light sources based on semiconductor optical amplifier and superluminescent diode

Laser applications and system considerations in ocular imaging

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Broadband radiation sources based on quantum-well superluminescent diodes emitting at 1550 nm

Cited by 12 publications

References 1 publication

Si-Based GaN Light-Emitting Diodes with MoS2 Nanosheet-Decorated Fabry–Perot Waveguide Structure

Si-Based GaN Light-Emitting Diodes with MoS2 Nanosheet-Decorated Fabry–Perot Waveguide Structure

Broadband high-brightness light sources based on semiconductor optical amplifier and superluminescent diode

Laser applications and system considerations in ocular imaging

Contact Info

Product

Resources

About

Si-Based GaN Light-Emitting Diodes with MoS₂ Nanosheet-Decorated Fabry–Perot Waveguide Structure

Si-Based GaN Light-Emitting Diodes with MoS₂ Nanosheet-Decorated Fabry–Perot Waveguide Structure