2019
DOI: 10.3103/s8756699019050030
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Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers

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Cited by 3 publications
(2 citation statements)
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“…The DSAM samples are characterized by approximately a double width of the reflective 'table' compared with the width of the SESAM reflection spectrum [5]. A DSAM is significantly cheaper and does not show the noticeable lateral spread of characteristics which is typical of MBE-grown SESAMs.…”
Section: Dsam Designmentioning
confidence: 99%
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“…The DSAM samples are characterized by approximately a double width of the reflective 'table' compared with the width of the SESAM reflection spectrum [5]. A DSAM is significantly cheaper and does not show the noticeable lateral spread of characteristics which is typical of MBE-grown SESAMs.…”
Section: Dsam Designmentioning
confidence: 99%
“…According to the measurements of the kinetics of bleaching and restoration of linear absorption [5], the following relaxation times were found: the ionization time of excitons localized in quantum wells τ 1 = 0.4 ps (sometimes called the 'short' relaxation time); the time to establish the electron-hole pair quasi-equilibrium τ 3 = 0.8 ps; the electron-hole recombination time τ 2 = 2 ÷ 3 ps (sometimes called the 'long' relaxation time). The last relaxation time determines the ability of the mirror with a fast saturable absorption operation.…”
Section: Kinetics Of Shuttersmentioning
confidence: 99%