Broadband Silicon TM-Pass Polarizer using a Slot-Assisted Periodic Waveguide

Zafar, Humaira; Odeh, Mutasem; Khilo, Anatol; Dahlem, M.

doi:10.1109/ipcon.2019.8908454

Cited by 4 publications

(3 citation statements)

References 6 publications

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“…Optical properties and the ER (IL) performance of the present polarizer as functions of η 1 and η 2 are summarized in Table 1. Both η 1 and η 2 are kept between 0.3 and 0.7 to make sure that the SWG fin width is within the limitation range of the fabrication requirement, since the minimum feature size has been realized in fabrication is 50 nm [9], [36]. In addition, the reflection peak (Bragg wavelength) of TE mode is kept at 1550 nm.…”

Section: Resultsmentioning

confidence: 99%

“…Compared with the TE mode waveguide, the TM mode waveguide can provide a more promising way for the highly sensitive sensing applications since TM polarization has stronger interactions of evanescent wave than that of TE polarization [8]. In the past years several configurations of TM-pass polarizers have been reported [9]- [15]. By utilizing 300 nm thick silicon core layer, Wang et al [10] proposed a CMOS compatible TM-pass polarizer of 10 μm in length with a negligible insertion loss (IL) and high extinction ratio (ER) performance.…”

Section: Introductionmentioning

confidence: 99%

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Interleaved Subwavelength Gratings Strip Waveguide Based TM Pass Polarizer on SOI Platform

Sun

2020

IEEE Photonics J.

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We report on an ultra-compact, low loss and broadband TM-pass polarizer, which is constructed by two interleaved subwavelength-gratings (SWGs) waveguides inserted in the center of the strip waveguide on a silicon-on-insulator (SOI) platform. The device structure is optimally engineered to support Bloch mode for fundamental TM polarization only. Therefore, the TM mode transmits along the strip waveguide with rather low propagation loss while the TE mode is completely reflected by the embedded SWGs waveguides. Simulation results show that an efficient and ultra-compact TM-pass polarizer of 5.2 μm in length is realized with extinction ratio (ER) of 31.63 dB and insertion loss (IL) of 0.18 dB at the operating wavelength of 1550 nm. The operation bandwidth for ER over 20 dB and IL below 0.32 dB is 155 nm (from 1465 to 1620 nm). By increasing the period number, the ER performance and bandwidth can be further improved. Furthermore, the fabrication of the present polarizer only requires mono-lithography and single etch process, which will greatly reduce the fabrication difficulty.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Interleaved Subwavelength Gratings Strip Waveguide Based TM Pass Polarizer on SOI Platform

Sun

2020

IEEE Photonics J.

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“…Several SOI TM-pass polarizers have been proposed and experimentally demonstrated in the literature. They are based on one-dimensional or two-dimensional photonic crystal waveguides [13][14][15], a silicon strip waveguide embedding a graphene/Si3N4/graphene multilayer [16], photonic/plasmonic hybrid grating waveguides [17][18][19], a silicon wire coupled to a highly doped silicon waveguide [20], a silicon wire with a VO2 film on the vertical sidewalls [21], subwavelength grating waveguides [22][23][24][25], a waveguiding structure with two tapered waveguides sandwiching a narrow waveguide only supporting TM mode propagation [25], plasmonic bends [26], and hyperuniform disordered structures [27][28][29][30]. The features of these components, in terms of length, insertion loss (IL) and extinction ratio (ER), are summarized in Table I.…”

Section: Introductionmentioning

confidence: 99%

Ultralow Loss and High Extinction Ratio TM-Pass Polarizer in Silicon Photonics

Dhingra

Olio

2020

IEEE Photonics J.

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TM-pass polarizers are pivotal components of photonic integrated circuits (PICs), especially those intended for biosensing applications. In the literature, several silicon TM-pass polarizers have been proposed, designed and experimentally demonstrated, but their insertion loss is not compatible with the current trend of silicon photonics aimed at exponentially increasing the component density within PICs. Herein, we propose and design a TM-pass polarizer whose insertion loss is carefully minimized to 0.05 dB at wavelength 1.55 µm by utilizing a combination of an asymmetric directional coupler and a mode evolution section. The adoption of appropriate technical solutions makes this record insertion loss value compatible with a high extinction ratio equal to 38 dB. With a device footprint of only 2.5 × 20 µm 2 , the design exhibits an insertion loss less than 1.7 dB and extinction ratio better than 30 dB over a large bandwidth of 200 nm. The design assumes the constraints of a typical silicon photonics open-access technological process and a standard 220 nm silicon-on-insulator (SOI) wafer. A very low sensitivity of the achieved performance to reasonable fabrication inaccuracies is demonstrated, with a worst-case insertion loss of only 0.32 dB at wavelength 1.55 µm.

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