Broadband, Ultra-High-Responsive Monolayer MoS₂/SnS₂ Quantum-Dot-Based Mixed-Dimensional Photodetector

Abstract

Atomically thin two-dimensional (2D) materials have gained significant attention from the research community in the fabrication of high-performance optoelectronic devices. Even though there are various techniques to improve the responsivity of the photodetector, the key factor limiting the performance of the photodetectors is constrained photodetection spectral range in the electromagnetic spectrum. In this work, a mixed-dimensional 0D/2D SnS2-QDs/monolayer MoS2 hybrid is fabricated for high-performance and broadband (UV–visible–near-infrared (NIR)) photodetector. Monolayer MoS2 is deposited on SiO2/Si using chemical vapor deposition (CVD), and SnS2-QDs are prepared using a low-cost solution-processing method. The high performance of the fabricated 0D/2D photodetector is ascribed to the band bending and built-in potential created at the junction of SnS2-QDs and MoS2, which enhances the injection and separation efficiency of the photoexcited charge carriers. The mixed-dimensional structure also suppresses the dark current of the photodetector. The decorated SnS2-QDs on monolayer MoS2 not only improve the performance of the device but also extends the spectral range to the UV region. Photoresponsivity of the device for UV, visible, and NIR region is found to be ∼278, ∼ 435, and ∼189 A/W, respectively. Fabricated devices showed maximum responsivity under the visible region attributed to the high absorbance of monolayer MoS2. The response time of the fabricated device is measured as ∼100 ms. These results reveal that the development of a mixed-dimensional (0D/2D) SnS2-QDs/MoS2-based high-performance and broadband photodetector is technologically promising for next-generation optoelectronic applications.

Plasmonic Au Nanoparticles Coated on ReS2 Nanosheets for Visible-Near-Infrared Photodetectors

“…Photodetection results of pristine ReS 2 are included in Figure S3, Supporting Information. The device responsivity decreased with increasing light intensity, as reported in the previous literature. ,, This trend is attributed to the ReS 2 trap states. Under low light intensities, the trap states capture most of the photogenerated charge carriers and therefore reduce the recombination of e–h pairs.…”

“…All these properties make ReS 2 a promising material for the photosensitive layer. On the other hand, published literature shows that the low mobility of ReS 2 hampers the performance of optoelectronic devices. , To date, various techniques have been proposed to improve the absorbance of the TMD photosensitive layer, such as heterostructure engineering, − chemical doping, integration of metal nanoparticles (NPs), ,− use of field-effect transistors, , mixed-dimensional heterostructures, ,− transport layer integration, ,, and so forth. However, the embedment of plasmonic metal NPs on TMDs is a superior approach to enhance the photosensing performance without changing the device area or 2D material thickness.…”

2D CdSe/CdS Core–Shell Nanoplatelets for High-Performance Photodetectors

“…The other critical parameters of photodetector devices such as photoresponsivity ( R ) and specific detectivity ( D *) are evaluated with varying power density from ∼0.7 to ∼15 mW/cm 2 . The power-dependent photoresponsivity and specific detectivity are calculated using the following equations ,, where J Ph is the photocurrent density in μA/cm 2 , P light is the input light power intensity in mW/cm 2 , I Ph is the photocurrent in μA, A is the active area of the device in cm 2 , q is the electronic charge in coulomb, and J d is the dark current density in μA/cm 2 . The photoresponsivity of the CS@661 nm NPLs device is ∼113.4 mA/W; the CS@630 nm NPLs device shows a photoresponsivity of ∼85.8 mA/W, and CdSe NPLs show only ∼0.007 mA/W.…”

Vertically oriented SnS2 on MoS2 nanosheets for high-photoresponsivity and fast-response self-powered photoelectrochemical photodetectors

“…5(d), and the previously reported results of other 2D materials are listed in Table 1. These results suggest HV-SnS 2 /MoS 2 has a superior response speed compared with BP 2 , Te@Bi, 44 SnS, 49 BP/MoS 2 , 45 SnS 2 (FET), 54 and SnS 2 /MoS 2 (FET) 52 based photodetectors. Meanwhile, compared with voltage-driven photodetectors based on MoS 2 and SnS 2 heterostructures, 34,48,50–53,55,56 the HV-SnS 2 /MoS 2 self-powered photodetector shows a fast response time but relatively lower photocurrent density and responsivity.…”

“…These results suggest HV-SnS 2 /MoS 2 has a superior response speed compared with BP 2 , Te@Bi, 44 SnS, 49 BP/MoS 2 , 45 SnS 2 (FET), 54 and SnS 2 /MoS 2 (FET) 52 based photodetectors. Meanwhile, compared with voltage-driven photodetectors based on MoS 2 and SnS 2 heterostructures, 34,48,50–53,55,56 the HV-SnS 2 /MoS 2 self-powered photodetector shows a fast response time but relatively lower photocurrent density and responsivity. To improve the photodetection capability of HV-SnS 2 /MoS 2 , applying an external bias may be an efficient way to accelerate the charge transport process.…”