Broadband voltage rectifier induced by linear bias dependence in CoFeB/MgO magnetic tunnel junctions

Tarequzzaman, M.; Jenkins, Alex; Böhnert, Tim; Borme, Jérôme; Martins, Leandro; Paz, Elvira; Ferreira, Ricardo; Freitas, P. P.

doi:10.1063/1.5029363

Cited by 34 publications

(19 citation statements)

References 31 publications

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“…The free layer is composed of Co 20 Fe 60 B 20 while the MgO tunnel barrier ensures a high magnetoresistance effect [23,24]. The perpendicular magnetic anisotropy (PMA) in the Co 20 Fe 60 B 20 -MgO bilayer is caused by an interfacial effect that arises from the hybridization between the O (from the MgO) and Fe (from the Co 20 Fe 60 B 20 ) orbitals, and can be controlled by the Co 20 Fe 60 B 20 composition and thickness of the free layer [13,14,25,26]. In other words, below a critical thickness, the free layer easy axis is outof-plane.…”

Section: B Device Realization and Characterizationmentioning

confidence: 99%

Experimental Demonstration of Spintronic Broadband Microwave Detectors and Their Capability for Powering Nanodevices

et al. 2019

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Nonlinear dynamics has been the key ingredient to improve the performance, in terms of sensitivity, of biased resonant spintronic diodes beyond their semiconductor counterparts. We experimentally demonstrate a nonlinear regime broadband detection for nanoscale spintronic diodes (NSD) where the rectification properties are independent of the input microwave frequency, and compare the device performance with the state of the art Schottky diode for low-power rectification. This regime is achieved in magnetic tunnel junctions with a canted magnetization of the free layer. We further show that the developed NSD provides sufficient dc voltage to supply a low-power nanodevice − a black phosphorus photosensor. Our results could pave the way for using spintronic detectors as building blocks for self-powered nanosystems, such as implantable biomedical devices, wireless sensors, and portable electronics.BIN FANG et al.PHYS. REV. APPLIED 0, XXXXXX (2019) spintronic diodes (NSD) are capable of powering a black phosphorus (BP) photosensor [15][16][17].

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Section: B Device Realization and Characterizationmentioning

confidence: 99%

Experimental Demonstration of Spintronic Broadband Microwave Detectors and Their Capability for Powering Nanodevices

et al. 2019

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“…Later, broadband STD rectification was demonstrated experimentally [ 61,62 ] for zero DC bias (see example in Figure 7). In the work by Fang et al., [ 61 ] a nonlinear regime broadband detection of STD was demonstrated and compared with the low‐power Schottky diode.…”

Section: Broadband Std Rectification Modementioning

confidence: 99%

“…It was shown that the considered STD maintains high enough DC voltage to supply the real low power nanodevice (black phosphorus photosensor). In the work by Tarequzzaman et al., [ 62 ] MTJs with a smooth linear resistance dependence on DC bias and in‐plane external magnetic field were produced. Such a dependence was obtained by changing the thickness of the free layer, which allows to manipulate by perpendicular magnetic anisotropy (PMA).…”

Section: Broadband Std Rectification Modementioning

confidence: 99%

Spin‐Torque Diodes: From Fundamental Research to Applications

Skirdkov

Zvezdin

2020

Annalen der Physik

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Among a rich variety of emerging spintronic devices, spin‐torque diodes (STDs) are among the most interesting, from both a fundamental and an applied perspective. The spin‐torque diode effect occurs when a microwave alternating electric current injected into a magnetic tunneling junction (MTJ) is rectified due to the simultaneous actions of tunneling magnetoresistance and spin‐transfer torque. While the sensitivity of STDs observed in the initial research is rather modest (about 1.4 mV mW−1), after only a few years researchers have increased it to 200 kV W−1 and demonstrated rectification at nanowatt input powers, which radically exceeds the capabilities of mainstream Schottky diodes. This impressive progress is based on a deep understanding of the complex STD physics and on recent advances in MTJ fabrication technology. Herein, the experimental pathways toward increasing the sensitivity and extending the frequency range of STDs and theoretical works aimed at explaining the complex nonlinear dynamics are analysed, and a wide variety of possible STD applications are discussed.

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“…Figure 2.10a presents a schematic of the measurement setup in which a DC current was sent through a bias tee. An external RF signal at 80 MHz was added to the DC current using a microwave circulator (4)(5)(6)(7)(8)(9)(10)(11)(12). An SHNO with a 200 nm constriction is shown in the inset to Fig.…”

Section: Current Modulation Of Spin Hall Nano Oscillatormentioning

confidence: 99%

“…It also holds great promise even for the realization of universal memory [5][6][7]. Extensive research by the spintronics community has aimed at achieving nanoscale spin-based microwave components, such as microwave generators [8][9][10][11], rectifiers [12], spin diodes [13], spin-wave generators [14,15], and modulators [16][17][18][19][20][21][22][23], which could be used as building blocks of communication systems.…”

Section: Introductionmentioning

confidence: 99%

Current Modulation of Nanoconstriction Spin-Hall Nano-Oscillators

et al. 2017

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This thesis explores the vibrant phenomena of spin Hall nano-oscillators (SHNOs); from wideband oscillation at the GHz range, through propagating spin-wave emission, to mutual synchronization in two-dimensional SHNO arrays, and tries to lay the foundation for a far-reaching SHNO technology, targeting magnonics, microwave signal generation, and neuromorphic computing. After a short introduction to the theoretical background in Chapter 1, in Chapter 2, ways of improving the spin transport properties between NiFe and Pt are explored: an 0.4 nm ultra-thin layer of Hf at the NiFe/Pt interface is found to reduce the threshold current by 20% as a result of the change in spin mixing conductance G Ö eff. Then, W/CoFeB/MgO stacks with perpendicular magnetic anisotropy (PMA) are used to demonstrate wide frequency tunability and sub-mA threshold currents in CMOS compatible SHNOs. By further increasing the PMA, the auto-oscillation frequency exceeds the ferromagnetic resonance (FMR) frequency, turning the SHNO into a propagating spin-wave emitter in which the propagation wave-vector is tunable with applied current and field. Finally, a GHz nano-scale SHNO modulated by an 80 MHz radio-frequency (RF) current is presented. The modulation needs no bulky microwave mixer, promising a compact modulator unit. Chapter 3 introduces two-dimensional SHNO arrays. Robust mutual synchronization is demonstrated in arrays accommodating up to 64 oscillators, achieving record high quality factors of 170,000 at an operating frequency of 10 GHz. Injection of two external microwave signals reproduces the two-dimensional synchronization maps used in neuromorphic vowel recognition. Chapter 4 emphasizes the importance of individual SHNO control in arrays. Gated SHNOs are demonstrated with substantial voltage tuning of the threshold current and the SHNO frequency. Voltage controlled mutual synchronization is also demonstrated. The MgO/AlO x /Si 3 N 4 gate is found to exhibit a memristive behavior governed by ion migration and acts as an embedded memory making each SHNO a complete non-volatile oscillator with integrated weights. The exciting nature of coupled non-volatile oscillator arrays controlled by electric field could lead to a paradigm shift in non-conventional computing. Chapter 5 discusses the implications of the demonstrated SHNO technology and how it may impact future applications.

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Broadband voltage rectifier induced by linear bias dependence in CoFeB/MgO magnetic tunnel junctions

Cited by 34 publications

References 31 publications

Experimental Demonstration of Spintronic Broadband Microwave Detectors and Their Capability for Powering Nanodevices

Experimental Demonstration of Spintronic Broadband Microwave Detectors and Their Capability for Powering Nanodevices

Spin‐Torque Diodes: From Fundamental Research to Applications

Current Modulation of Nanoconstriction Spin-Hall Nano-Oscillators

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