Broadband wavelength-selective isotype heterojunction n+-ZnO/n-Si photodetector with variable polarity

Chatzigiannakis, Georgios; Jaros, Angelina; Leturcq, R.; Jungclaus, Jörgen; Voss, T.; Gardelis, Spiros; Kandyla, M.

doi:10.1016/j.jallcom.2022.163836

Cited by 15 publications

(5 citation statements)

References 47 publications

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“…As shown in Figure 3i , the responsivity values of our device alongside previously reported SPDs are exhibited for comparison. [18,30,[38][39][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54] It can be noted that FAPbBr 3 /Ge-based SPD reveals good response characteristics compared with varieties of self-powered photodetectors. The external quantum efficiency (EQE) with variation of light intensity was also calculated as shown in Figure S9a (Supporting Information), where the maximum EQE value of 79.03% is achieved at the weak light intensity of 218.3 nW cm −2 .…”

Section: Resultsmentioning

confidence: 99%

Self‐Powered Photodetector Based on Perovskite/Ge Heterojunction with High Responsivity

Wang,

Geng,

Jin

et al. 2024

Adv Materials Technologies

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Self‐powered photodetectors (SPDs) are regarded as a new type of photodetectors without external energy sources, exhibiting great potential in the next generation of image sensing, biological detection, and robotics. Here, single crystal CH(NH2)2PbBr3 (FAPbBr3) perovskite with a low trap density of 1.64 × 109 cm−3 is directly integrated onto single crystal germanium (Ge). The band structure of the heterojunction belongs to type‐II alignment type, which is beneficial to the achievement of high responsivity. Therefore, the fabricated Au/FAPbBr3/Ge/Au detector exhibits a high responsivity of 0.33 A W−1, detectivity up to 3.83 × 1011 Jones and relatively fast decay time of 4.94 ms without external bias under 520 nm laser illumination. In addition, a prototype of an imaging system is set up utilizing the photodetector as a sensing pixel, from which the imaging function is verified. This work demonstrates a facile strategy for designing high‐performance SPDs.

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Section: Resultsmentioning

confidence: 99%

Self‐Powered Photodetector Based on Perovskite/Ge Heterojunction with High Responsivity

Wang,

Geng,

Jin

et al. 2024

Adv Materials Technologies

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“…The optoelectronic properties of ZnO/Si based p-n heterojunctions have been studied widely but only a few reports are available on isotype heterojunction photodetector based on ZnO/Si. Chatzigiannakis et al have recently reported only photocurrent spectra of an ALD grown ZnO/Si n-n isotype heterojunction photodetector. Similarly, a few other reports are also available, − but detailed investigation and analyses such as photocurrent transients, photosensitivity, response time, stability, low power detectability, and photoresponse under frequency-modulated illuminations have not been performed to show the ZnO/Si isotype junction as a high-performance broadband photodetector.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast and Ultrabroadband UV–vis-NIR Photosensitivity under Reverse and Self-Bias Conditions by n⁺-ZnO/n-Si Isotype Heterojunction with >1 kHz Bandwidth

Mondal

Halder

Basak

2023

ACS Appl. Electron. Mater.

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A high-performance broadband photodetector has attracted significant attention due to its wide range of applications. We report an n+-ZnO/n-Si isotype heterojunction by depositing ZnO nanorods followed by a ZnO thin film on an n-type undoped Si wafer for detecting a broad wavelength from 300 to 940 nm with a high speed under reverse as well as zero bias conditions. Under 1.5 V reverse and zero bias, the device provides responsivity values up to ∼200 and ∼13 mA/W respectively. Under self-bias, the n+-ZnO/n-Si heterojunction exhibits up to 1.2 × 103 photosensitivity. The n+-ZnO/n-Si heterojunction can detect power as low as 10–12 μW/cm2. A photoresponse up to 2 kHz modulated illuminations has been measured, and the ultrafast n+-ZnO/n-Si heterojunction provides a stable and rapid photoresponse with a response time in the 60–120 μs range. The n+-ZnO/n-Si heterojunction exhibits a −3 dB cutoff frequency of >2000 and 1100 Hz under reverse and zero bias, respectively. Therefore, we unprecedentedly demonstrate an n+-ZnO/n-Si isotype heterojunction as a potential candidate for detecting light in a broad ultraviolet to infrared region with a very high speed and >1 kHz frequency bandwidth as well.

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“…[ 30,31 ] Meanwhile, the memristor structure of the electrode/dielectric layer/electrode could significantly improve the integration density and exhibit great strength in practical production. [ 32,33 ] Both the NiO film and ZnO film are important optical materials, and they are frequently applied in optical devices, photodetectors, and light‐emitting diodes [ 34,35 ] owing to their good absorption ability of ultraviolet light. Reducing the composite center of materials or adding the trap layer to capture charge carriers helps to improve the memory capacity of synapses, i.e., prolonging the lifetime of photocarriers in optical materials.…”

Section: Introductionmentioning

confidence: 99%

Photonic Synapses for Image Recognition and High Density Integration of Simplified Artificial Neural Networks

Fang

Meng

et al. 2023

Adv Elect Materials

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With the rapid development of artificial intelligence (AI), there is an urgent need for developing a biological sensory perception system that can simulate the human brain for information processing. Inspired by the biological vision system, photo‐responsive photonic synapses are ideal devices for constructing photosensitive artificial neural networks for neuromorphic computing tasks. This paper reports a stable photonic synaptic device in an array layout with adjustable synaptic plasticity under ultraviolet light pulses. Since the heterojunction has a photoconductivity effect and the trap layer provides superior charge carrier trapping capability, optical sensing, memory, and neuromorphic computing are integrated into a single device. Meanwhile, supervised learning of handwritten digitals is achieved by exploiting the multistate conductance by photoelectric co‐modulation and the specific decay law. The recognition rate reaches 90.6% and hardly changes with time. Additionally, the device can simplify the artificial neural network (ANN) and reduce its size to 3.78% of the original network while retaining strong fault tolerance and learning ability. The photonic artificial synapses based on ultraviolet light modulation provide a novel and effective approach for photosensory ANNs to perform in situ computation.

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Broadband wavelength-selective isotype heterojunction n+-ZnO/n-Si photodetector with variable polarity

Cited by 15 publications

References 47 publications

Self‐Powered Photodetector Based on Perovskite/Ge Heterojunction with High Responsivity

Self‐Powered Photodetector Based on Perovskite/Ge Heterojunction with High Responsivity

Ultrafast and Ultrabroadband UV–vis-NIR Photosensitivity under Reverse and Self-Bias Conditions by n⁺-ZnO/n-Si Isotype Heterojunction with >1 kHz Bandwidth

Photonic Synapses for Image Recognition and High Density Integration of Simplified Artificial Neural Networks

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Broadband wavelength-selective isotype heterojunction n+-ZnO/n-Si photodetector with variable polarity

Cited by 15 publications

References 47 publications

Self‐Powered Photodetector Based on Perovskite/Ge Heterojunction with High Responsivity

Self‐Powered Photodetector Based on Perovskite/Ge Heterojunction with High Responsivity

Ultrafast and Ultrabroadband UV–vis-NIR Photosensitivity under Reverse and Self-Bias Conditions by n+-ZnO/n-Si Isotype Heterojunction with >1 kHz Bandwidth

Photonic Synapses for Image Recognition and High Density Integration of Simplified Artificial Neural Networks

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Ultrafast and Ultrabroadband UV–vis-NIR Photosensitivity under Reverse and Self-Bias Conditions by n⁺-ZnO/n-Si Isotype Heterojunction with >1 kHz Bandwidth