Halide
perovskite/crystalline silicon (c-Si) tandem solar cells
promise power conversion efficiencies beyond the limits of single-junction
cells. However, the local light-matter interactions of the perovskite
material embedded in this pyramidal multijunction configuration, and
the effect on device performance, are not well understood. Here, we
characterize the microscale optoelectronic properties of the perovskite
semiconductor deposited on different c-Si texturing schemes. We find
a strong spatial and spectral dependence of the photoluminescence
(PL) on the geometrical surface constructs, which dominates the underlying
grain-to-grain PL variation found in halide perovskite films. The
PL response is dependent upon the texturing design, with larger pyramids
inducing distinct PL spectra for valleys and pyramids, an effect which
is mitigated with small pyramids. Further, optimized quasi-Fermi level
splittings and PL quantum efficiencies occur when the c-Si large pyramids
have had a secondary smoothing etch. Our results suggest that a holistic
optimization of the texturing is required to maximize light in- and
out-coupling of both absorber layers and there is a fine balance between
the optimal geometrical configuration and optoelectronic performance
that will guide future device designs.