Broadening the optimum thermoelectric power generation range of p-type sintered Bi0.4Sb1.6Te3 by suppressing bipolar effect

Optimized Thermoelectric Properties of Bi0.48Sb1.52Te3 through AgCuTe Doping for Low-Grade Heat Harvesting

“…Mainly owing to the enhancement of grain orientation, the carrier mobility of the x = 0.14 sample is higher than those of the other samples. A similar phenomenon has been reported in a previous paper …”

“…It is, thus, essential to regulate the hole concentration for sintered materials of p-type Bi 0.5 Sb 1.5 Te 3 or similar compositions. Usually, the nonequivalent element doping, such as Ag, Cu, Mn, Mg, Pb, Cd, Zn, or Ca, can effectively increase the hole concentration. ,,− Moreover, doping with the chalcogenides of these elements can also introduce various defects into the Bi 2 Te 3 -based matrix and reduce κ lat for higher TE performance. Especially, (Cu, Ag) 2 X (X = S, Se, and Te) are typical “phonon-liquid electron-crystal” materials, which have attracted wide attention due to their extremely low κ lat . , Actually, Cu 2 Se doping in Bi 2 Te 3 and Cu 2 Te doping in SnTe have been proved to effectively reduce κ lat . , …”

Mediating Point Defects Endows n‐Type Bi2Te3 with High Thermoelectric Performance and Superior Mechanical Robustness for Power Generation Application

“…Based on the two supercells of S Te(1)/(2) , cation antisite defects Bi Te(1)/(2) containing different atom occupations are constructed (Figure S3 and S4, Supporting Information). In this regard, the formation energy of the abovementioned Bi Te(1)/(2) antisite defects is overall higher than that of the initial [19,[23][24][25][26][27][28]33,34] c) The measured conversion efficiency as a function of temperature difference (ΔT) for our fabricated Bi 2 Te 2.9 S 0.1 (TeI 4 ) 0.0012 (n)/Bi 0.4 Sb 1.6 Te 3.01 (p) module and previous data of Bi 2 Te 3 -based modules, including Bi 0.35 Sb 1.65 Te 2.96 Se 0.04 + 3 wt.% Te (p)/ ZM Bi 2 Te 2.5 Se 0.5 + 1.5 mol% CuBr 2 (n), [35] Bi 0.4 Sb 1.597 Pb 0.003 Te 3 (p)/ZM Bi 2 Te 2.5 Se 0.5 + 1.5 mol% CuBr 2 (n), [36] Bi 1.52 Sb 1.48 Te 3 (p)/Bi 2 Te 2.7 Se 0.3 + 1 wt.% Bi 2 S 3 (n), [37] Bi 0.5 Sb 1.49 Cd 0.01 Te 3 (p)/ hot extruded Bi 2 Te 3 -based materials (n), [38] Bi 2 Te 3 -based conventional module (ZM for both n/p), [20] selective laser melting Bi 0.4 Sb 1.6 Te 3 (p)/ZM Bi 2 Te 2.7 Se 0.3 (n), [20] ZM Bi 0.5 Sb 1.5 Te 3 (p)/ZM Bi 2 Te 2.7 Se 0.3 (n) [39] and melt spun Zn 0.015 Bi 0.46 Sb 1.54 Te 3.015 (p)/ ZM Bi 2 Te 2.7 Se 0.3 (n) [39] modules.…”

Enhanced thermoelectric performance in Bi0.5Sb1.5Te3/SiC composites prepared by low-temperature liquid phase sintering

“…(1) It is important to control the Bi/Sb ratio to achieve the optimum hole concentration, thereby enhancing ZT values in (Bi,Sb) 2 Te 3 -based materials. 40,[70][71][72][73] (2) Excess Te could be involved in (Bi,Sb) 2 Te 3+x , which can reduce lattice thermal conductivity and improve carrier mobility. 44,74,75 (3) Other alternative secondary inorganic phases (such as carbon nanotubes, 76 FeTe 2 (ref.…”