Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers

Abstract

A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning range of 202 nm (1122 nm-1324 nm) is demonstrated. A maximum output power of 480 mW and a side-mode suppression ratio greater than 45 dB are achieved in the central part of the tuning range. We exploit a number of strategies for enhancing the tuning range of external cavity quantum-dot lasers. Different waveguide designs, laser configurations and operation conditions (pump current and temperature) are investigated for optimization of output power and tunability.

Giant resonant light forces in microspherical photonics

“…49 Due to small scattering losses (,3 dB) in the tapered region we were able to control the total guided power (P 0 ) at the waist of the taper with ,5% precision. The propelling velocity is expected to be almost linearly dependent on P 0 for spheres with D,10 mm.…”

Compact All-Quantum-Dot-Based Tunable THz Laser Source

“…Initially, the QD laser chip was tested in the single-grating quasi-Littrow configuration [24], and a broad tunability of 182 nm (between 1128 nm and 1310 nm) at room temperature (20°C) and under an operation current of 1.7 A with a maximum output power of 435 mW was achieved, as depicted in Fig. 2.…”

“…The highlighted concepts of a dual-wavelength generation are of special interest for a number of applications ranging from biophotonics and wavelength division multiplexing, where the channels of information are encoded on light signals of different wavelengths, to nonlinear frequency conversion, particularly to the visible spectral range by second harmonic generation [21] and to the terahertz region [22] by difference frequency-driven photomixer devices. In this respect, semiconductor lasers, and InAs/GaAs quantum-dot (QD) lasers in particular, with their small size, high efficiency, reliability and low cost can offer broad near-infrared (1 -1.3 µm) wavelength coverage and wide tunability [23,24] T simultaneously [20]. At the same time, InAs/GaAs QD-based antennas capable of being pumped at very high optical intensities of higher than 1W optical power [25], i.e.…”

Mixed state effects in waveguide electro-absorbers based on quantum dots

“…1 Notable applications include monolithic mode-locked lasers (MMLLs), 2 electro-absorption modulators, 3 saturable absorber mirrors, 4 and broad band emitters. 5 In investigations of the carrier dynamics of such materials, time-resolved pump-probe spectroscopy has proved a useful tool, an early example being the impact of different carrier types for quantum well absorbers. 6 Recently, multi-pulse variations of the technique were applied to QD structures to investigate the nature of the semiconductor optical amplifier (SOA) dynamics.…”

“…6 Recently, multi-pulse variations of the technique were applied to QD structures to investigate the nature of the semiconductor optical amplifier (SOA) dynamics. 7 Carrier interaction between various states within a dot (intradot dynamics) is of particular importance in two promising application areas where multiple optical transitions within each dot may be involved, namely broad band emitters 5 and MMLLs. 2 In both of these applications, simultaneous operation at ground state (GS) and excited state (ES) wavelengths can occur.…”