Brush plated ZnS films and their properties

Murali, K. R.; Dhanemozhi, A. Clara; John, Rita

doi:10.1016/j.jallcom.2007.09.131

Cited by 9 publications

(5 citation statements)

References 18 publications

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“…Therefore, the preparation conditions of a given technique greatly affect not only the number of phases formed but also its microstructural properties such as crystallinity. These results are in agreement with Muraliet al [14]. The crystallite size was measured using Debye Scherrer's formula [11].…”

Section: Fig 2 Xrd Patterns Of Boron Doped Non-annealed Zns Filmssupporting

confidence: 91%

Band gap modification of spray pyrolysed ZnS films by doping and thermal annealing

Yeşilkaya¹,

Ulutas²

2019

Res. Eng. Struct. Mater.

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Section: Fig 2 Xrd Patterns Of Boron Doped Non-annealed Zns Filmssupporting

confidence: 91%

Band gap modification of spray pyrolysed ZnS films by doping and thermal annealing

Yeşilkaya¹,

Ulutas²

2019

Res. Eng. Struct. Mater.

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“…It can be inferred that the direct band gap value is about 5.3 eV through extension method. The obtained value is larger than relevant literature [24], this may be caused by quantum effect [25], and also by crystallization, grain size, and the stress and impurities on the films. Therefore, the films can be suitably employed in photosensor and optoelectronic applications.…”

Section: Uv Spectracontrasting

confidence: 70%

Synthesis and Optical Properties Study of ZnS Crystallitic Films

Liu

Xie

Han

et al. 2014

AMM

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This manuscript presents the synthesis and characterization of ZnS crystallitic films on ITO conducting glass by a simple hydrothermal method, based on sulfuration conversion from Zn nanocrystallines which are synthesized by pulse-plating technology. X-ray diffraction (XRD), scanning electron microscopy (SEM) and equipped with Oxford 7538 (EDS) analyzer techniques were used to characterize the Zn nanocrystallines and the novel ZnS crystallitic films. The results showed that ZnS crystallitic films were wurtzite, uniform and compact. Furthermore, the existence of Zn nanocrystallines and the complexing agent 5-sulfosalicylate influenced the microsopic morphology of ZnS crystallitic films. The optical properties, band gap energy and the size of nanocrystals were studied by UV-vis spectrophotometer measurements. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 5.3 eV.

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“…The dislocation density δ, defined as the length of dislocation lines per unit volume of the crystal has been evaluated using the formula [8] δ=1/D 2 ……………(2) It is observed that the dislocation density decreases with increase of grain size. Information on the particle size and strain for the AgGaSe 2 films was obtained from the full-width at half-maximum of the diffraction peaks.…”

Section: Resultsmentioning

confidence: 99%

Photoelectrochemical Cells Studies with Brush Electrodeposited AgGaSe₂ Films

Murali

Kumar²,

Perumal

2015

ECS Trans.

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AgGaSe2 films were brush electrodeposited on tin oxide coated glass substrates at different substrate temperatures. The films were single phase with chalcopyrite structure. Optical absorption measurements indicated a band gap in the range of 1.74 eV to 1.94 eV with decrease of substrate temperature. AgGaSe2 films were deposited on tin oxide coated conducting glass substrates at different substrate temperature in the range of 30–80°C at a deposition current density of 5.0 mA cm-2. Thickness of the films varied in the range of 700 – 1200 nm with increase of substrate temperature. Photoelectrochemical solar cells were fabricated using the films. The photoelectrodes post heat treated at 550°C exhibited a Voc of 0.475V, Jsc of 4.30 mA cm-2 and a conversion efficiency of 1.43 %. After photoetching, the conversion efficiency increased to 3.0 %.

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Brush plated ZnS films and their properties

Cited by 9 publications

References 18 publications

Band gap modification of spray pyrolysed ZnS films by doping and thermal annealing

Band gap modification of spray pyrolysed ZnS films by doping and thermal annealing

Synthesis and Optical Properties Study of ZnS Crystallitic Films

Photoelectrochemical Cells Studies with Brush Electrodeposited AgGaSe₂ Films

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Brush plated ZnS films and their properties

Cited by 9 publications

References 18 publications

Band gap modification of spray pyrolysed ZnS films by doping and thermal annealing

Band gap modification of spray pyrolysed ZnS films by doping and thermal annealing

Synthesis and Optical Properties Study of ZnS Crystallitic Films

Photoelectrochemical Cells Studies with Brush Electrodeposited AgGaSe2 Films

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Product

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Photoelectrochemical Cells Studies with Brush Electrodeposited AgGaSe₂ Films