BTBT Based LIF Junctionless FET Neuron With Plausible Mimicking Efficiency

Rajakumari, V; Pradhan, K P

doi:10.1109/tnano.2023.3247424

Cited by 6 publications

(1 citation statement)

References 19 publications

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“…restricted by the von Neumann architecture with unique implicit analogue capabilities such as ultra-low power consumption, robustness and efficient parallel computing [1][2][3][4][5][6][7][8]. Furthermore, it emphasizes on highly effective neuromorphic systems with fault tolerance and self-learning characteristics by overcoming the traditional von Neumann bottleneck.…”

Section: Introductionmentioning

confidence: 99%

A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity

Chandrasekar,

Raja Shaik,

Rajakumari

et al. 2024

Semicond. Sci. Technol.

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This paper is primarily focused on developing an analytical model to mimic the synaptic behavior with non-zero bandgap of boron (B)/nitrogen (N) substitution doped graphene field effect transistors (GFET). The trap charges at the channel and gate-insulator interface are utilized to induce the hysteresis conduction mechanism, which further is exploited to accomplish the synaptic plasticity. The proposed recurrence i.e., time dependent trap states drain current model is well capturing the physical insights of trap charges through an equivalent MIG (metal-insulator-graphene) model. The interesting fact of the proposed model is that it is compatible with both the doped (B/N) as well as with the undoped GFET. The model is also explored to generate the hysteresis characteristics of the GFET that is further utilized for mimicking the synaptic behavior. Another fact needs to be noticed is the existence of complete off regions for doped B/N GFET unlike the undoped case that manifests the undesirable ambipolar behaviour. As a result, the synapse made up of B/N doped GFET is predicting an optimistic learning and memory mechanism, termed as spike time dependent plasticity (STDP). The STDP characteristics of B/N doped synaptic GFET has been enhanced by more than 18$\times$ when compared against the artificial synapse made by undoped GFET. Hence, the hysteresis behaviour along with non-zero bandgap of B/N substitution doped GFETs make it highly favourable in dynamic mimicking of synaptic plasticity with efficient biologically plausible.

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