BTO-Coupled CIGS Solar Cells with High Performances

Abstract

In order to improve the power conversion efficiency (PCE) of Cu(In,Ga)Se2 (CIGS) solar cells, a BaTiO3 (BTO) layer was inserted into the Cu(In,Ga)Se2. The performances of the BTO-coupled CIGS solar cells with structures of Mo/CIGS/CdS/i-ZnO/AZO, Mo/BTO/CIGS/CdS/i-ZnO/AZO, Mo/CIGS/BTO/CdS/i-ZnO/AZO, Mo/CIGS/CdS/BTO/i-ZnO/AZO, Mo/CIGS/BTO/i-ZnO/AZO, Mo/CIGS/CdS/BTO/AZO, and Mo/ CIGS/CdS(5 nm)/BTO(5 nm)/i-ZnO/AZO were systematically studied via the SCAPS-1D software. It was found that the power conversion efficiency (PCE) of a BTO-coupled CIGS solar cell with a device configuration of Mo/CIGS/CdS/BTO/AZO was 24.53%, and its open-circuit voltage was 931.70 mV. The working mechanism for the BTO-coupled CIGS solar cells with different device structures was proposed. Our results provide a novel strategy for improving the PCE of solar cells by combining a ferroelectric material into the p-n junction materials.

Boosting Efficiency of CIGS Solar Cell by Ferroelectric Depolarization Field

“…The decreased J sc is caused by the parasitic optical absorption and device band diagram modification. [ 32 ] Thus, the ZnMgO plays a crucial role in the improvement of the device performance. Insertion of ZnMgO between CdS and BTO is found to helpful to the PCE boost (Figure 1b and Table 1) thanks to the avoid the diffusion of Al and the damage of CdS, leading to void‐free interface (Figure S8b, Supporting Information).…”

“…[ 33 ] The experimental results are well consistent with the theoretical results, as we have reported in the published paper. [ 32 ] However, the increased R s , see Figure 1h and Table 1, results in the FF drop (Figure 1g). [ 34 ] The increased R s is ascribed to the high resistivity (≈2.4 × 10 −2 Ω·cm) of BTO (Figure S10, Supporting Information), which is also seen from the increased R sh (Figure 1i and Table 1).…”

Studies of Performance of Cs2TiI6−XBrX (Where x = 0 to 6)-Based Mixed Halide Perovskite Solar Cell with CdS Electron Transport Layer

“…In this section, the optimization of thickness of different perovskite absorbing layers such as Cs 2 TiBr 6 , Cs 2 TiI 1 Br 5 , Cs 2 TiI 2 Br 4 , Cs 2 TiI 3 Br 3 , Cs 2 TiI 4 Br 2 , Cs 2 TiI 5 Br 1 and Cs 2 TiI 6 has been studied at 27 °C temperature with standard defect density (~1014 cm −3 ) and a constant series resistance [ 18 ] by varying the thickness from 0.3 to 3.0 µm. Here, Figure 2 a–c represent the PCE; a J-V graph with the thickness variation as 0.3 µm, 0.4 µm, 0.5 µm, 1.0 µm, 1.5 µm, 2.0 µm, 2.5 µm, 3.0 µm, 3.5 µm and 4.0 µm for the Cs 2 Ti– 6−X Br X perovskite solar cell; and PCE with the back contacts’ metal work function.…”

Silver sulfide thin film solar cells: materials, fabrication methods, devices, and challenges

“…33 However, there is still a significant performance gap compared to emerging inorganic thin film solar cells such as CZTSSe 39 and CIGS. 40 The main reasons for the lower efficiency of Ag 2 S thin film solar cells compared with their theoretical limit are the significant losses in open-circuit voltage ( V oc ) and fill factor (FF). 41 Factors limiting further improvements in Ag 2 S device performance include: (1) absorption layer fabrication methods: different fabrication methods for Ag 2 S thin films can result in variations in crystal structure, surface morphology, and physical properties, leading to differences in the photovoltaic efficiency and carrier mobility of the devices.…”