Bubbles and Cavities Induced by Rare Gas Implantation in Silicon Oxide

Ntsoenzok, E.; Assaf, Hanan; Ruault, M.O.

doi:10.1557/proc-864-e7.3

Cited by 8 publications

(5 citation statements)

References 20 publications

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“…Indeed, we do not observe H-formed cavities in SiO 2 following implantation or annealing under a range of conditions ͑not shown͒. This is consistent with the results reported in the study of inert gas implantation in SiO 2 , 18 where the formation of implantationinduced cavities is only observed when heavy noble gas species such as Kr and Xe are implanted. Ntsoenzok et al also demonstrated that He or Ne implantation-induced cavities cannot be formed within SiO 2 , regardless of implantation temperature and attributed the lack of cavities to the high mobility of the gas atoms in SiO 2 .…”

Section: Methodssupporting

confidence: 92%

Self-assembled Au nanoparticles in SiO2 by ion implantation and wet oxidation

Charnvanichborikarn

Wong‐Leung

Williams

2009

Journal of Applied Physics

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Implantation, annealing, and oxidation processes have been used to form Au nanoparticles with a narrow size and depth distribution in a SiO 2 layer. Different approaches have been attempted: in particular, the gettering of Au to fill preformed nanocavities ͑obtained by H-implantation and annealing͒ and thus overcome the broad particle size distribution that is normally associated with nanoparticles formed by implantation and annealing. The results suggest that nanocavities cannot be directly formed in SiO 2 by H-implantation and a subsequent annealing due partly to the high mobility of H atoms in SiO 2. However, cavities formed in Si are useful in obtaining a narrow size and depth distribution of Au precipitates: the Si substrate can then be oxidized to form Au nanoparticles in SiO 2. Sequential wet oxidations of Si samples containing Au nanoparticles have revealed several interesting phenomena, namely, segregation of Au particles at a growing oxide interface, Au-enhanced oxidation, dissolution and reprecipitation of Au precipitates during oxidation, and preferential wetting of Au on the oxide layer. In particular, the Au dissolution and reprecipitation processes are Si interstitial mediated. By completely oxidizing the top Si layer, an array of Au precipitates can be confined at a precise depth within a SiO 2 layer corresponding to the front interface of a buried oxide layer. The size distribution of the resulting Au precipitates in SiO 2 is smallest when Au is first gettered to cavities and vacancies are subsequently introduced into the Si layer prior to oxidation.

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Section: Methodssupporting

confidence: 92%

Self-assembled Au nanoparticles in SiO2 by ion implantation and wet oxidation

Charnvanichborikarn

Wong‐Leung

Williams

2009

Journal of Applied Physics

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“…It should be noted that the accumulation of implanted noble gas ions leading to their clustering in the subsurface layers of irradiated materials was observed experimentally . The appearance of He and Ar clusters in silicon and silicon dioxide was confirmed for higher ion energies (>~1 keV) in contrast to the implantation of low‐energy ions, which can be thermally desorbed from the uppermost layers of the material because of the small implantation depth.…”

Section: Molecular Dynamic Simulationsmentioning

confidence: 82%

Pore sealing mechanism in OSG low‐k films under ion bombardment

Воронина

Sycheva

Lopaev

et al. 2019

Plasma Processes & Polymers

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Organosilicate glass (OSG) nanoporous films with a low dielectric constant (low-k) are used as interlayer-dielectric insulators for advanced interconnects of ultra-large-scale integration devices. Plasma treatment of these materials can lead to their degradation resulting in increasing k-value and reducing lifetime and reliability. However, for some OSG films, the densification of the uppermost surface layer and pore sealing was observed under ion irradiation. This paper presents the results of a combined experimental and modeling study of mechanisms of low-k film densification by ion bombardment depending on the film-pore size, ion type, and energy.The obtained results reveal that experimentally observed densification and pore sealing of uppermost layers of OSG films occur via collapse of near-surface pores under the impact of energetic ions. K E Y W O R D Slow-k dielectrics, molecular dynamics, nanoporous materials, plasma damage, pore sealing

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“…[ 28,29 ] It was also demonstrated that cavities in Si (formed by noble gas implantation) could act in gettering detrimental metallic impurities during wafer growth or subsequent processing for Si devices, [ 30–32 ] avoiding electronic properties degradation. [ 33,34 ] On the other hand, the xenon insertion can, in its turn, produce condensates as bubble‐like structures in Si [ 35 ] and SiO 2 [ 36–38 ] matrices or micro‐crystalline precipitates in metallic materials with FCC, BCC, and HCP structures. [ 39–42 ]…”

Section: Introductionmentioning

confidence: 99%

“…[28,29] It was also demonstrated that cavities in Si (formed by noble gas implantation) could act in gettering detrimental metallic impurities during wafer growth or subsequent processing for Si devices, [30][31][32] avoiding electronic properties degradation. [33,34] On the other hand, the xenon insertion can, in its turn, produce condensates as bubble-like structures in Si [35] and SiO 2 [36][37][38] matrices or micro-crystalline precipitates in metallic materials with FCC, BCC, and HCP structures. [39][40][41][42] Given the relevance of the theme, the xenon nanobubbles formation and the residual damages in Xe + -implanted Si(001) substrate and its evolution under thermal annealing were investigated and discussed here.…”

Section: Introductionmentioning

confidence: 99%

Xenon Nanobubbles and Residual Defects in Annealed Xe‐Implanted Si(001): Analysis by the Combination of Advanced Synchrotron X‐Ray Diffraction and Transmission Electron Microscopy Techniques

Calligaris,

Lang,

Bettini

et al. 2024

Adv Materials Technologies

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Residual crystalline defects on the subsurface of Xe‐implanted Si(001) and post‐annealed substrates are investigated by advanced X‐ray diffraction and transmission electron microscopy techniques. Local characterization highlights the features of recrystallization and structural evolution induced by thermal treatments resulting from the formation of gaseous Xe nanobubbles embedded in a heavily twinned surrounding Si matrix. Both mappings of conventional reciprocal space and X‐ray multiple‐beam diffraction exhibited different aspects from the kinematical and dynamical X‐ray theories, respectively, contributing to a better understanding and description approach of residual damage in ion‐beam implanted materials. A simple layered model is proposed based on the experimental Q‐Scans profiles and computational calculations, distinguishing host matrix structural strain artifacts from the Xe‐bubbles pressure probed by a Xe M4,5‐edge blue shift in EELS spectra. Bubble pressure is determined by extrapolating the equation of state for xenon at high temperatures. The study also supports an experimental constant CXeM‐edge for the ∆E ≅ C n theoretical expression.

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Bubbles and Cavities Induced by Rare Gas Implantation in Silicon Oxide

Cited by 8 publications

References 20 publications

Self-assembled Au nanoparticles in SiO2 by ion implantation and wet oxidation

Self-assembled Au nanoparticles in SiO2 by ion implantation and wet oxidation

Pore sealing mechanism in OSG low‐k films under ion bombardment

Xenon Nanobubbles and Residual Defects in Annealed Xe‐Implanted Si(001): Analysis by the Combination of Advanced Synchrotron X‐Ray Diffraction and Transmission Electron Microscopy Techniques

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