Buckling driven interface delamination between a thin metal layer and a ceramic substrate

Liu, C.J.; Zhang, G.Q.; Ernst, L.J.; Vervoort, M.; Wisse, G.

doi:10.1109/ectc.2001.927794

Cited by 2 publications

(3 citation statements)

References 7 publications

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“…However, as electronic devices continue the trend toward miniaturization, their lifetime/reliability is deteriorated by the combination of the increased heat generation and the mismatch in thermal expansion at the copper–silicon interface. Commonly, this failure originates from delamination or breakage at the material interface due to the heat-induced strain concentration caused by the mismatch of coefficient of thermal expansion (CTE) . In addition, electro-migration and the resulting thermo-migration also limit the performance and application of Cu TSV interposers at high frequencies, high current densities, and high temperatures .…”

Section: Introductionmentioning

confidence: 99%

“…Commonly, this failure originates from delamination or breakage at the material interface due to the heat-induced strain concentration caused by the mismatch of coefficient of thermal expansion (CTE). 2 In addition, electro-migration and the resulting thermo-migration also limit the performance and application of Cu TSV interposers at high frequencies, high current densities, and high temperatures. 3 Therefore, the need for interposer materials possessing both high electrical conductivity and low CTE (to match the substrate material) is increasingly important.…”

Section: ■ Introductionmentioning

confidence: 99%

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Through-Silicon-Via Interposers with Cu-Level Electrical Conductivity and Si-Level Thermal Expansion Based on Carbon Nanotube-Cu Composites for Microelectronic Packaging Applications

Chen

Sundaram

Sekiguchi

et al. 2020

ACS Appl. Nano Mater.

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Through-silicon-via (TSV) interposers using silicon and copper represent a critical element in microelectronic packaging, as they bridge between fine-pitch inputs/outputs at the integrated circuit chips to the coarser-pitch packages at the substrate. High electrical conductivity is one of the required properties, but as with the continued miniaturization of electronics, thermal expansion match between the substrate (typically silicon) and copper becomes increasingly important to avoid device failure. A CNT-Cu composite TSV interposer was fabricated envisioning microelectronic packaging applications, which demonstrates both copper-level electrical conductivity (∼2.5 × 10 5 S/ cm) and Si-level coefficient of thermal expansion (CTE) (∼7 × 10 −6 / K). The CTE mismatch between CNT-Cu and Si was measured to be less than 1/5 compared with that between Cu and Si. To realize this, numerous technologies were combined. Specifically, this included the precision synthesis of vertically aligned pillars perfectly normal to the growth substrate, structural reinforcement of the CNT bundles to retain alignment during processing, electrodeposition of Cu into the interstitial spaces of the CNT pillars, and insertion of the CNT-Cu pillar arras into a prefabricated TSV substrate. Finally, the functionality of the prepared CNT-Cu TSV interposer was demonstrated for several configurations.

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Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Through-Silicon-Via Interposers with Cu-Level Electrical Conductivity and Si-Level Thermal Expansion Based on Carbon Nanotube-Cu Composites for Microelectronic Packaging Applications

Chen

Sundaram

Sekiguchi

et al. 2020

ACS Appl. Nano Mater.

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show abstract

“…4) The greater mismatch between the CTEs of the heat source and heat sink causes a variety of interface issues, such as delamination, buckling and nonevent strain distribution, which will result in a low heat removal. 5) Therefore, a greater similarity of the CTEs among the IGBT module materials and higher thermal conductivity are required. The carbon materials, such as carbon nanotube (CNT) and graphene, are candidate material to reduce the material's CTE.…”

Section: Introductionmentioning

confidence: 99%

Metal Injected Copper Carbon Nanotube Composite Material with High Thermal Conductivity and Low CTE for IGBT Power Modules

Mohammadi

Arab

2018

Mater. Trans.

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Power modules, particularly in hybrid and electric vehicles, have become an essential part of their thermal management system design. In power cooling modules, the temperature variations are important issues, leading to thermal stresses caused by different coefficients of thermal expansion (CTE) in the composite materials. Thus, one should consider suitable materials and manufacturing processes to achieve the best performance and reliability during the device's life cycle. The Cu/CNT-Cu material is assumed to have a unique combination of a high thermal conductivity and low coefficient of thermal expansion, which results in a new composite material that goes beyond the ability of regular materials. To address this, we have developed the Cu/CNT-Cu composite with a significant improvement in thermal conductivity (³327 W/mK) which is within the industrial scale range of copper metal injection molding (320340 W/mK) and low coefficient of thermal expansion (³6 ppm/K), both of which make it an excellent choice for power modules in next generation automobiles. This was achieved by reducing the voids and increasing the interface bonding while adding the copper coated CNTs, which were made by an electroplating process. This mixed Cu/CNT-Cu property makes it the top material design selection in the Ashby map and has a better temperature stability due to its lower thermal distortion parameter (TDP). As a result, this material will represent a significant scientific and technological development in the advancement cooling of IGBT power module devices.

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Role of graphene surface coating of DBC substrate on sintering motion behavior of copper nanoparticles for silicon carbide power devices

Liu,

Lv,

Wei

et al. 2024

Eur. Phys. J. Plus

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Buckling driven interface delamination between a thin metal layer and a ceramic substrate

Cited by 2 publications

References 7 publications

Through-Silicon-Via Interposers with Cu-Level Electrical Conductivity and Si-Level Thermal Expansion Based on Carbon Nanotube-Cu Composites for Microelectronic Packaging Applications

Through-Silicon-Via Interposers with Cu-Level Electrical Conductivity and Si-Level Thermal Expansion Based on Carbon Nanotube-Cu Composites for Microelectronic Packaging Applications

Metal Injected Copper Carbon Nanotube Composite Material with High Thermal Conductivity and Low CTE for IGBT Power Modules

Role of graphene surface coating of DBC substrate on sintering motion behavior of copper nanoparticles for silicon carbide power devices

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