“…Most of the amorphous oxide TFTs have been developed based on the electronegativity and standard electrode potential of dopants. 58,62,65 Three decades ago, Wen et al, 80 recently Kim research group [81][82][83][84][85][86][87][88][89][90][91][92] and Parthiban et al 34,93,94 have developed high-mobility Zr-, Germanium (Ge-), Sn-, W-, Nb-, Mo-, Si-, and Ti-doped indium oxide transparent conducting thin-films, which were followed by the development of empirical relations and postulates by Zhang. 95 The empirical relationship associated with electron negativity, ionic radii, and effective charge of dopants, was proposed by Zhang and defined the function as a scale for strength of Lewis acids.…”