Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

Rowena, I. B.; Selvaraj, S. Lawrence; Egawa, Takashi

doi:10.1109/led.2011.2166052

Cited by 129 publications

(65 citation statements)

References 8 publications

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“…On the other hand, when the substrate is grounded, the cross talk can be effectively suppressed as the substrate bias is clamped at 0 V. Although a floated Si substrate can boost the breakdown voltage of GaN-on-Si lateral power devices, such a substrate termination is undesirable from the device stability point of view. The orthodox way to enhance the breakdown voltage of the lateral power device is to increase the thickness of the GaN buffer/transition layer [23].…”

Section: Discussionmentioning

confidence: 99%

Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform

Jiang

Tang

Zhou

et al. 2014

IEEE Trans. Electron Devices

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Cross talks between low-voltage peripheral devices and high-voltage (HV) power devices on an AlGaN/GaN-on-Si smart power IC platform are investigated by monitoring the transfer, output, and transient characteristics of a low-voltage AlGaN/GaN high-electron mobility transistor (HEMT) with an HV bias stress applied to an adjacent isolated electrode. The electric measurement was conducted under two types of substrate termination, i.e., floating and grounded. The substrate termination is shown to be the critical factor in the cross talk. The low-voltage HEMT exhibits significant drain-current degradation with a floating substrate, but remains stable with a grounded substrate. It is determined that a coupling path of the switched HV stress is formed from the HV node to the floating low-resistivity Si substrate, and then from the substrate to the HEMT. The negative net charges in the GaN buffer are caused by the electrons injected from the 2DEG channel. It is found that a grounded substrate is helpful for eliminating the cross-talk effect.Index Terms-AlGaN/GaN-on-Si power device platform, buffer traps, cross talk, substrate termination.

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Section: Discussionmentioning

confidence: 99%

Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform

Jiang

Tang

Zhou

et al. 2014

IEEE Trans. Electron Devices

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“…The screw and edge dislocation densities were calculated from the FWHM values (Metzger et al, 1998). By growing thick buffers, we achieved lowest dislocation densities of 5.8x10 8 cm -2 and 2.6x10 10 cm -2 respectively for screw and edge dislocation density (Rowena et al, 2011). The TEM image shown below in Fig.8 has a 2 µm i-GaN grown on 3 µm buffer.…”

Section: Gan On Simentioning

confidence: 97%

Transmission Electron Microscopy to Study Gallium Nitride Transistors Grown on Sapphire and Silicon Substrates

Selvaraj¹,

Egawa²

2012

The Transmission Electron Microscope

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“…The leakage current behaviors of these GaN buffers are studied to understand the relationship between the residual carbon and the vertical buffer breakdown voltage. 16,17 Furthermore, the buffer breakdown uniformity characteristics are further investigated, being beneficial for commercialization of 200-mmdiameter GaN-on-Si technology.…”

Section: Introductionmentioning

confidence: 99%

Effect of Carbon Doping and Crystalline Quality on the Vertical Breakdown Characteristics of GaN Layers Grown on 200-mm Silicon Substrates

Wang

Selvaraj

Win

et al. 2015

Journal of Elec Materi

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We have carried out a systematic study on the vertical breakdown behavior of GaN-based epitaxial layers on 200-mm-diameter Si(111) substrates with different carbon concentrations. The GaN layers were grown by metalorganic chemical vapor deposition by tuning growth parameters such as temperature and pressure. This study shows that, when the carbon concentration of the wafers is below 1 9 10 18 cm À3 , the vertical leakage currents are high with breakdown voltages below 260 V. The wafers that reveal lower vertical leakage currents are those with moderate carbon doping concentrations (between $1 9 10 18 cm À3 and 2.5 9 10 18 cm À3 ), whereas wafers with higher carbon concentrations ( ‡4 9 10 18 cm À3 ) give rise to poor breakdown behavior caused by lower crystal quality and rougher surface morphology. The uniformity of vertical breakdown behavior across a 200-mm wafer shows that wafers with low crystal quality also exhibit poor uniformity. Moreover, when the carbon doping level is relatively high (between $2 9 10 18 cm À3 and 2.5 9 10 18 cm À3 ), good uniformity with variation of $5% can be achieved.

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Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

Cited by 129 publications

References 8 publications

Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform

Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform

Transmission Electron Microscopy to Study Gallium Nitride Transistors Grown on Sapphire and Silicon Substrates

Effect of Carbon Doping and Crystalline Quality on the Vertical Breakdown Characteristics of GaN Layers Grown on 200-mm Silicon Substrates

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