Buffered direct injection of photocurrents into charge-coupled devices

Bluzer, N.; Stehlik, R.

doi:10.1109/t-ed.1978.19054

Cited by 22 publications

(9 citation statements)

References 2 publications

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“…12(b)-(d), the image quality is degraded by the effect of leakage current in the parasitic pn junctions of the deselected row switches. [18] The images captured by the fabricated CIF PAPS CMOS imager chip [14] under different values of are also shown in Fig. 12(e)-(h).…”

Section: Resultsmentioning

confidence: 99%

“…The use of shared zero-biased-buffer in the OPAPS structure is the same as the buffer-direct-injection (BDI) [14], [15] readout structure. Through the shared zero-biased-buffer, the bias of pixel bus is controlled by the input voltage of the gain stage G1.…”

Section: Opapsmentioning

confidence: 99%

“…In Fig. 3, the modified OPAPS circuit is composed of the buffer-direct-injection (BDI) [14], [15] readout structure, the PMOS transistor as the reset switch, the APS-like structure with the NMOS source follower 1, , and 2, and a parasitic capacitor . The value of is set to be slightly larger than the threshold voltage of Min.…”

Section: Opapsmentioning

confidence: 99%

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Optimal design of CMOS pseudoactive pixel sensor (PAPS) structure for low-dark-current and large-array-size imager applications

Shih

2005

IEEE Sensors J.

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In this paper, a pixel structure called the optimal pseudoactive pixel sensor (OPAPS) is proposed and analyzed for the applications of CMOS imagers. The shared zero-biased-buffer in the pixel is used to suppress both dark current of photodiode and leakage current of pixel switches by keeping both biases of photodiode and parasitic pn junctions in the pixel bus at zero voltage or near zero voltage. The factor of photocurrent-to-dark-current ratio per pixel area (PDRPA) is defined to characterize the performance of the OPAPS structure. It is found that a zero-biased-buffer shared by four pixels can achieve the highest PDRPA. In addition, the column sampling circuits and output correlated double sampling circuits are also used to suppress fixed-pattern noise, clock feedthrough noise, and channel charge injection. An experimental chip of the proposed OPAPS CMOS imager with the format of 352 288 (CIF) has been designed and fabricated by using 0.25-m single-poly-five-level-metal (1P5M) -well CMOS process. In the fabricated CMOS imager, one shared zero-biased-buffer is used for four pixels where the PDRPA is equal to 47.29 m 2 . The fabricated OPAPS CMOS imager has a pixel size of 8.2 8.2 m, fill factor of 42%, and chip size of 3630 3390 m. Moreover, the measured maximum frame rate is 30 frames/s and the dark current is 82 pA cm 2 . Additionally, the measured optical dynamic range is 65 dB. It is found that the proposed OPAPS structure has lower dark current and higher optical dynamic range as compared with the active pixel sensor (APS) and the conventional passive pixel sensor (PPS). Thus, the proposed OPAPS structure has high potential for the applications of high-quality and large-array-size CMOS imagers.Index Terms-CMOS imagers, dark current, optimal pseudoactive pixel sensor (OPAPS), photodiode, pn junctions.

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Section: Resultsmentioning

confidence: 99%

Section: Opapsmentioning

confidence: 99%

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Optimal design of CMOS pseudoactive pixel sensor (PAPS) structure for low-dark-current and large-array-size imager applications

Shih

2005

IEEE Sensors J.

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“…Charge collection in direct injection [13] and buffered direct injection [14,15] topology is carried out at the drain of the inject MOS transistor. The direct injection approach has the advantage of simplicity and high injection efficiencies.…”

Section: Adaptation and Charge Collectionmentioning

confidence: 99%

Study on infrared detection data read out technologies

Yongquan

Bi³

2011

SPIE Proceedings

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Read out circuit is a critical component needed for infrared and visible light imaging system. Advances in image sensors and microelectronics have led to the development of digital read out fabricated using deep sub micro integrated circuit techniques. An brief review is given of the image sensor developing. Major adaptation circuit are review including source follower, direct injection, and capacitance trans impedance amplifier. On chip analog signal processing and analog to digital conversion techniques are also discussed. Noise shaping modulation is a promising technique to build a low power, ultra small area, high precision pixel level AD convertor.

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“…VG _ R1oad1i,jDl 'photo (10) The current injected into the integration capacitor is (4) 'input gfl1RIoadqjfljDILIIpot0 .…”

Section: Gate Modulationmentioning

confidence: 99%

Attainment of high sensitivity at elevated operating temperatures with staring hybrid HgCdTe-on-sapphire focal plane arrays

et al. 1994

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Buffered direct injection of photocurrents into charge-coupled devices

Cited by 22 publications

References 2 publications

Optimal design of CMOS pseudoactive pixel sensor (PAPS) structure for low-dark-current and large-array-size imager applications

Optimal design of CMOS pseudoactive pixel sensor (PAPS) structure for low-dark-current and large-array-size imager applications

Study on infrared detection data read out technologies

Attainment of high sensitivity at elevated operating temperatures with staring hybrid HgCdTe-on-sapphire focal plane arrays

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