Building Functional Memories and Logic Circuits with 2D Boron Nitride

Abstract

The fast development of synthesis routes and preparation technology of 2D materials has motivated a rapid growth in the micro‐ and nanoelectronic memory devices, which gives rise to the breakthroughs in the semiconductor research area. Hexagon boron nitride (h‐BN) with excellent chemical, mechanical, and optical properties has been proven to have potential in overcoming the scaling limit to nanometer, and even sub‐nanometer lengths to replace the use of thick and stiff blocking dielectrics in two‐terminal or three‐terminal devices. The use of atomically thin h‐BN or h‐BN van der Waals heterostructures (vdWhs) can improve the reliability, capability, and functionality of memory devices. This is an encouraging strategy toward high‐density on‐chip integrated circuits, which has recently earned considerable interest. While the research in h‐BN material properties and characterization is comprehensively verified, specified mechanisms of resistive switching have not been analyzed in‐depth. Moreover, recent concern about novel structure design and expanding applications in electronics, optoelectronics, and spintronics has arisen. In this review, recent progress in h‐BN memories with volatile or nonvolatile properties is presented, expanding the memories to functional applications, and further challenges of the development of h‐BN‐based memories and logic circuits are discussed.

Synaptic Characteristics of an Ultrathin Hexagonal Boron Nitride (h‐BN) Diffusive Memristor

“…[ 27 ] The recent reports on resistive‐switching materials have shown a great potential in h ‐BN‐based devices. [ 28,29 ] Therefore, further research on threshold switching (TS) and artificial synaptic devices based on h ‐BN material is highly desirable for the realization of emerging neuromorphic computing systems. [ 30 ]…”

Systematic Design and Demonstration of Multi‐Bit Generation in Layered Materials Heterostructures Floating‐Gate Memory

“…[ 24–28 ] In particular, hexagonal boron nitride (hBN), which has dielectric properties and tunable atomic thickness (i.e., layered materials), allows us to extend van der Waals (vdW) heterostructure FETs with 2D materials to demonstrate various functional memories and logic circuits. [ 29–31 ]…”

Synthesis and Modification of Boron Nitride Nanomaterials for Electrochemical Energy Storage: From Theory to Application

“…Moreover, BN exhibits an adjustable electronic structure after interface engineering modification, which is conducive to electrocatalytic reactions. [9,[183][184][185] Li and co-workers demonstrated that a graphene-BN (G/BN) heterostructure can be used as an effective metal-free catalyst for the ORR. [186] By combining two different substances with similar lattice parameters and crystal structures, G/BN possesses unique structural characteristics and exhibits distinct physical and chemical properties from those of pure BN and graphene.…”