Building programmable integrated circuits through disordered Chern insulators

Wu, Bing-Lan; Wang, Zibo; Zhang, Zhiqiang; Jiang, Hua

doi:10.1103/physrevb.104.195416

Cited by 11 publications

(5 citation statements)

References 44 publications

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“…The CIC propagating direction (i.e., chirality) is dictated by the relative orientation of the spontaneous magnetization in the two QAH insulators 1 , 2 , 19 . Therefore, the creation and manipulation of CESs and/or CICs can facilitate the development of topological chiral networks 20 , 21 , which have the potential for applications in energy-efficient QAH-based electronic and spintronic devices. Moreover, it has been proposed that chiral Majorana physics in QAH/superconductor heterostructures can be probed by placing a grounded superconductor island on the domain boundary between C = + 1 and C = −1 QAH insulators in a Mach-Zehnder interferometer configuration 22 , 23 .…”

Section: Introductionmentioning

confidence: 99%

Creation of chiral interface channels for quantized transport in magnetic topological insulator multilayer heterostructures

et al. 2023

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One-dimensional chiral interface channels can be created at the boundary of two quantum anomalous Hall (QAH) insulators with different Chern numbers. Such a QAH junction may function as a chiral edge current distributer at zero magnetic field, but its realization remains challenging. Here, by employing an in-situ mechanical mask, we use molecular beam epitaxy to synthesize QAH insulator junctions, in which two QAH insulators with different Chern numbers are connected along a one-dimensional junction. For the junction between Chern numbers of 1 and −1, we observe quantized transport and demonstrate the appearance of the two parallel propagating chiral interface channels along the magnetic domain wall at zero magnetic field. For the junction between Chern numbers of 1 and 2, our quantized transport shows that a single chiral interface channel appears at the interface. Our work lays the foundation for the development of QAH insulator-based electronic and spintronic devices and topological chiral networks.

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Section: Introductionmentioning

confidence: 99%

Creation of chiral interface channels for quantized transport in magnetic topological insulator multilayer heterostructures

et al. 2023

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“…[64,65] To protect the spin coherence against the relaxation crucial for the experimental verification, it is crucial to achieve high-quality materials with minimizing interfacial strains and low defects. In future, one could also explore 107306-6 the spin-valley locking in topological quantum materials [54,55] and design novel electronic devices [66] based on topological protection.…”

Section: Discussionmentioning

confidence: 99%

Perspectives of spin-valley locking devices

Tao

2023

Chinese Phys. B

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Valleytronics is an emerging field of research which utilizes the valley degree of freedom to encode information. However, it is technically nontrivial to produce a stable valley polarization and to achieve efficient control and manipulation of valleys. Spin-valley locking refers to the coupling between spin and valley degree of freedoms in the materials with large spin-orbit coupling (SOC) and enables the manipulation of valleys indirectly through controlling spins. Here, we review the recent advances in spin-valley locking physics and outline possible device implications. In particular, we focus on the spin-valley locking induced by SOC and external electric field in certain 2D materials with inversion symmetry and demonstrate the intriguing switchable valley-spin polarization, which can be utilized to design the promising electronic devices, namely valley-spin valves and logic gates.

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“…Complementary metal-oxide semiconductors (CMOS) [1][2][3] applications have been effectively downscaled to boost integrated circuits (ICs) [4][5][6] speed and accuracy at a reduced cost. Nevertheless, the miniaturization of CMOS logic circuits today comes up against increasingly penalizing leakage currents and other fundamental limitations.…”

Section: Introductionmentioning

confidence: 99%