Building resistive switching memory having super-steep switching slope with in-plane boron nitride

Wang, Yisen; Huang, Zhifang; Chen, Xinyi; Lü, Miao

doi:10.1088/1361-6528/ac4289

Cited by 5 publications

(4 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…introduced the first RS memory devices based on CVD‐grown h‐BN on a flexible PET substrate ( Figure a), showing long retention time, reproducible endurance properties, and the capability to operate under extreme bending tests. [ 276 ] With this study as a starting momentum, considerable research in h‐BN‐based RS memory devices with different switching types (unipolar (Figure 17b), [ 261,266,275,277 ] bipolar (Figure 17c), [ 257–261,264–268,270–288 ] and threshold switching (Figure 17d) [ 257,260,265,270,277,280,287 ] ) has been carried out with different electrode materials and thickness of h‐BN. Pan et al.…”

Section: H‐bn For Next‐generation Electronicsmentioning

confidence: 99%

“…h-BN possesses great advantages as an active RS medium thanks to its extraordinary physical properties: i) h-BN is the only wide-bandgap (≈6 eV) 2D material that ensures an extremely low current level in high resistive states (HRS) and a high current on/off ratio. [257][258][259][260][261] ii) Atomically thin nature of h-BN can lead to ultrafast switching speed, low energy consumption, and high-density 3D integration. [260,[262][263][264][265][266][267][268][269][270] iii) The high breakdown strength and low variability of h-BN can improve device reliability and variability.…”

Section: Resistive Switching Mediummentioning

confidence: 99%

“…[270,274,275] With these tremendous benefits, Qian et al introduced the first RS memory devices based on CVD-grown h-BN on a flexible PET substrate (Figure 17a), showing long retention time, reproducible endurance properties, and the capability to operate under extreme bending tests. [276] With this study as a starting momentum, considerable research in h-BN-based RS memory devices with different switching types (unipolar (Figure 17b), [261,266,275,277] bipolar (Figure 17c), [257][258][259][260][261][264][265][266][267][268][270][271][272][273][274][275][276][277][278][279][280][281][282][283][284][285][286][287][288] and threshold switching (Figure 17d) [257,260,265,270,…”

Section: Resistive Switching Mediummentioning

confidence: 99%

See 2 more Smart Citations

Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics

et al. 2022

View full text Add to dashboard Cite

Hexagonal boron nitride (h-BN), a member of 2D materials, has an analogous crystal structure to graphene, yet, is an insulator having an indirect bandgap of ≈6 eV. [16] h-BN has been explored as the "ideal" substrate and excellent encapsulant [17] for other 2D materials including graphene and transition metal dichalcogenides (TMDs) due to its excellent insulating property, atomically flat surface free of dangling bonds, [18] and charged impurities, and high thermal conductivity. [19,20] Encapsulating other 2D materials with h-BN effectively protects them from local electrical and chemical environment, enabling them to manifest their theoretically expected "intrinsic" properties. In addition, h-BN has been utilized as passive components in 2D vdW electronic devices, such as gate dielectrics and tunneling barriers.Recently, h-BN is attracting intensive research interests, motivated by the variety of outstanding properties, it shows across the fields of quantum optics, [21] electronics, and optoelectronics. [22] For example, despite its indirect-bandgap nature, h-BN showed deep-ultraviolet (DUV) emission with exceptionally high internal quantum efficiency (IQE) comparable to or even higher than single-crystalline direct-bandgap semiconductors. Defects in h-BN are efficient [21,23] and stable sources for single-photon emission over a wide range of wavelengths, from near-infrared (NIR) [24] to nearultraviolet (NUV), [25] at room temperature. The giant lightmatter interaction and strong band-edge absorption offered by h-BN enable the realization of solar-blind DUV photo detection by using h-BN as the active layer where DUV photons are effectively absorbed and create electrical carriers. h-BN has also been adopted as active media for low energy electronic devices, including nonvolatile resistive switching (RS) memory and radio-frequency (RF) devices, in addition to passive components for field-effect transistors (FETs), effective diffusion barriers, and low-k interlayer dielectrics (ILDs).This article aims to review the most recent discoveries of extraordinary properties of h-BN and advancements in emerging photonic and electronic applications. Although there are several well-written review articles on h-BN, [26][27][28][29] this review article focuses on the most recent theoretical discoveries, such as the stacking sequences of h-BN and related optical properties, and the elucidation on how an indirect-bandgap h-BN exhibits strong emission as efficient as a direct-bandgap Hexagonal boron nitride (h-BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h-BN research, it is explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface that is free of dangling bonds and charged impurities, and its high thermal conductivity. Recent discoveries of st...

show abstract

Section: H‐bn For Next‐generation Electronicsmentioning

confidence: 99%

Section: Resistive Switching Mediummentioning

confidence: 99%

Section: Resistive Switching Mediummentioning

confidence: 99%

See 1 more Smart Citation

Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics

et al. 2022

View full text Add to dashboard Cite

show abstract

“…Currently, there have been several studies on the resistive switching characteristics of the hBN films, confirming the feasibility of hBN memristors; even the monolayer hBN film can exhibit resistive switching characteristics [ 22 , 32 , 33 ]. Additionally, some researchers focus their attention on the resistive switching mechanisms of hBN memristors.…”

Section: Introductionmentioning

confidence: 99%

Transfer-Free Analog and Digital Flexible Memristors Based on Boron Nitride Films

Wang,

Liu,

et al. 2024

Nanomaterials

View full text Add to dashboard Cite

The traditional von Neumann architecture of computers, constrained by the inherent separation of processing and memory units, faces challenges, for instance, memory wall issue. Neuromorphic computing and in-memory computing offer promising paradigms to overcome the limitations of additional data movement and to enhance computational efficiency. In this work, transfer-free flexible memristors based on hexagonal boron nitride films were proposed for analog neuromorphic and digital memcomputing. Analog memristors were prepared; they exhibited synaptic behaviors, including paired-pulse facilitation and long-term potentiation/depression. The resistive switching mechanism of the analog memristors were investigated through transmission electron microscopy. Digital memristors were prepared by altering the electrode materials, and they exhibited reliable device performance, including a large on/off ratio (up to 106), reproducible switching endurance (>100 cycles), non-volatile characteristic (>60 min), and effective operating under bending conditions (>100 times).

show abstract