2013
DOI: 10.4028/www.scientific.net/msf.740-742.311
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Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method

Abstract: In this paper, we review our researches on the high-quality 3C-SiC bulk crystal growth. The polytype control and the suppression of defects are essential in the growth 3C-SiC on hexagonal SiC seed crystals. The growth polytype of SiC is usually controlled by the inheritance of the seed crystal. In contrast, we established kinetic polytype control in which the preferential growth of 3C-SiC can be achieved by the difference in the growth rates depending on supersaturation for the polytypes. In the growth of 3C-S… Show more

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Cited by 9 publications
(12 citation statements)
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“…Figure 2 shows the initial cluster (top) and its early stage (3ms) evolution depending on the miscut of the substrate <11-20> (left) and <1-100> (right). As it can be seen the interaction between the step and the island is clearly different in the two considered cases, this is due to the different stability of the [11][12][13][14][15][16][17][18][19][20] and [1-100] dislocations [27], with the first one being more stable than the latter (which leads to the zig-zag feature of the steps in the <11-20> direction [28]). A miscut towards the <11-20> direction generates steps that are aligned to the [1-100] direction (i.e.…”
Section: Resultsmentioning
confidence: 99%
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“…Figure 2 shows the initial cluster (top) and its early stage (3ms) evolution depending on the miscut of the substrate <11-20> (left) and <1-100> (right). As it can be seen the interaction between the step and the island is clearly different in the two considered cases, this is due to the different stability of the [11][12][13][14][15][16][17][18][19][20] and [1-100] dislocations [27], with the first one being more stable than the latter (which leads to the zig-zag feature of the steps in the <11-20> direction [28]). A miscut towards the <11-20> direction generates steps that are aligned to the [1-100] direction (i.e.…”
Section: Resultsmentioning
confidence: 99%
“…Finally, we have systematically explored the r crit value varying the the growth temperature and growth rate (see Fig. 4) finding that r crit (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) is always larger than r crit…”
Section: Resultsmentioning
confidence: 99%
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“…The model discussed for the elimination of DPB is based on anisotropic lateral expansion of the two 3C domains and was first proposed by Latu-Romain et al 19 . More recently using Monte-Carlo simulations, the possibility to obtain DPBs-free 3C epilayers has been predicted only on misoriented 6H substrates with large miscut (~ 8º was proposed but towards [11][12][13][14][15][16][17][18][19][20]), for on-axis substrates (both 6H and 4H) a random distribution of large 3C-SiC domains should appear and for the growth on 4H-SiC substrates with large miscut, dislocations would degrade the layer quality 20 . It is worth noting that the largest sample free of DPB reported to date has been obtained by the CF-PVT method and is a 30 mm diameter free-standing (111) 3C-SiC layer grown on an on-axis substrate 21 .…”
mentioning
confidence: 99%
“…However, this method needs precise lithography and dry etching technique for substrate preparation and only small area free of DPBs are obtained, typically around 200 x 200 µm 2 . Using TSSG technique DPBs-free 3C layers were obtained only on 6H-SiC 4º off-cut oriented toward the [1-100] direction 11 . The model discussed for the elimination of DPB is based on anisotropic lateral expansion of the two 3C domains and was first proposed by Latu-Romain et al 19 .…”
mentioning
confidence: 99%