Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

Abstract

Unsleber, S.; Deppisch, M.; Krammel, C.M.; Vo, Minh; Yerino, C.D.; Simmonds, P.G.; Lee, Minjoo Larry; Koenraad, P.M.; Schneider, C.; Höfling, S. Published in: Optics Express DOI:10.1364/OE.24.023198Published: 03/10/2016 Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Unsleber, S., Deppisch, M., Krammel, C. M., Vo, M., Yerino, C. D., Simmonds, P. G., ... Höfling, S. (2016). Bulk AlInAs on InP(111) as a novel material system for pure single photon emission. Optics Express, 24(20), 23198-23206. DOI: 10.1364/OE.24.023198 General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Abstract: In this letter, we report on quantum light emission from bulk AlInAs grown on InP(111) substrates. We observe indium rich clusters in the bulk Al 0.48 In 0.52 As (AlInAs), resulting in quantum dot-like energetic traps for charge carriers, which are confirmed via cross-sectional scanning tunnelling microscopy (XSTM) measurements and 6-band k·p simulations. We observe quantum dot (QD)-like emission signals, which appear as sharp lines in our photoluminescence spectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 µeV. We demonstrate the capability of this new material system to act as an emitter of pure single photons as we extract g (2) -values as low as g

Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness

“…For the secondary peak, we obtain E 1 = 46 meV and E 2 = 13 meV. For the primary peak, values of E 1 = 24 meV and E 2 = 9 meV rule out In-rich InAlAs nanoclusters as the cause, since we have previously measured activation energies of E 1 = 34 meV and E 2 = 5 meV for these QD-like features 33 .…”

“…Given this unexpected result, we must exclude alternative causes of the primary PL peak. Possible origins include TSQD excited-state emission 32 , emission from phase-separated In-rich nanoclusters in the InAlAs 33 , or emission from a family of smaller GaAs TSQDs due to a bimodal size distribution 19 . The primary peak persists even for PL excitation densities as low as 0.3 W/cm 2 , which precludes excited state emission as the cause [see Supplementary Fig.…”

“…3(b)]. For each curve we extract two activation energies, E 1 and E 2 , using a biexponential model 33 :

Figure 3( a ) Temperature-dependent PL from 4.5 ML GaAs TSQD sample. The red spectrum was collected at 80 K. ( b ) Integrated intensities of primary and secondary PL peaks plotted against inverse temperature.

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Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors

“…This is why QWIPs always need an extra diffraction grating (or any other equivalent mechanism) on top of the devices to operate properly in normal incidence. As a result, the strong signal measured in our SML-QDIPsthese devices have among the highest detectivity values reported to date [17,31]can only be due to the 3D confinement of carriers inside the In-rich clusters observed in the X-STM images, and the blueshift of the spectral response must be related to the size variation of these clusters that behave as quantum dots [32].…”

Light Emitting Devices Based on Quantum Well-Dots

“…In the case of InGaAs/GaAs QWs, there are fluctuations of the In composition that acts as localization potentials for electrons and holes [14]. Similar effects of QD-like emission from In-rich regions have also been observed in InAlAs/InP (see, for example [15]). Compositional and thickness fluctuations are much more enhanced in case of quaternary or quinary QWs, e.g., InGaAsN(Sb).…”