Bulk charge-transfer doping of amorphous metal oxide: fullerene blends for solution-processed amorphous indium zinc oxide thin-film transistors

Abstract

A facile bulk charge transfer doping method enabled electrical performance improvement of a low temperature solution processed thin film transistor.

Thermal Evaporation of Large-Area SnS2 Thin Films with a UV-to-NIR Photoelectric Response for Flexible Photodetector Applications

“…Importantly, the SnS 2 nanosheets are surrounded and connected by amorphous SnS 2 , resulting in a hybrid/composite structure with both crystalline and amorphous components. To date, several groups have fabricated blended crystalline and amorphous blending materials for flexible photoelectric research, such as inorganic nanocrystal/organic blends − and carbon/amorphous metal oxide blends. , Compared to these materials, the advantages of the materials developed in this work are as follows: (1) the crystalline and amorphous phases are homogeneous with respect to the chemical composition (only containing S and Sn), resulting in a smooth interface between the crystalline and amorphous phases. Such homogeneous components may endow these thin films with higher mechanical flexibility than heterogeneous thin films; (2) inorganic materials usually display higher charge carrier mobility than organic materials, leading to the higher conductivity of flexible all-inorganic thin films, which is favorable for obtaining excellent optoelectric properties; (3) the inorganic crystalline and amorphous blended structure facilitates the improvement of both the photoelectric performance and flexibility; and (4) the thermal evaporation method can be used to fabricate flexible thin films with larger areas than of films obtained by the spin-coating method.…”

Effect of channel thickness on radiation hardness of solution-processed oxide thin film transistors

“…By using the bandgap (E gap ) from UV-vis spectroscopy and the Fermi level from XPS near the valence band, the conduction band offsets (DE CB ) were calculated to be 1.20 eV (t ch = 4 nm), 0.71 eV (t ch = 5 nm), and 0.44 eV (t ch = 6.2 nm), respectively (Table S1, ESI †). [65][66][67] Therefore, the ex situ stable performance of the ZITO TFT with a t ch value of 4 nm against proton irradiation could be ascribed to the suppressed channel conductivity where the device with a wide energy bandgap (E gap ) and conduction band offset (DE CB ) could reduce the doping effects of electrons from shallow donor states to the conduction band minimum against proton irradiation and suppress cascade atomic displacement in the lattice within the bulk oxide semiconductor with smaller thickness. 49 Furthermore, we have employed in situ electrical characterization of TFTs with different t ch values during irradiation to understand the real-time changes of device characteristics under ionizing radiation conditions.…”