2024
DOI: 10.35848/1347-4065/ad24a2
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Bulk fin-type field-effect transistor-based capacitorless dynamic random-access memory with strong resistance to geometrical variations

Min Seok Kim,
Sang Ho Lee,
Jin Park
et al.

Abstract: In this study, a bulk fin-type field-effect transistor (FinFET)–based capacitorless one-transistor dynamic random-access memory (1T-DRAM) was proposed. The fabrication process of the proposed 1T-DRAM was similar to that of a typical junctionless bulk FinFETs, except that the p-type doped body fin region operated as a charge storage region. The effects of the geometrical variations, such as the fin angle (θfin) variation and line edge roughness (LER), which are inevitable in fabrication, on the transfer charact… Show more

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