2006
DOI: 10.1016/j.jcrysgro.2006.04.103
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Bulk GaN single crystal growth and characterization using various alkali metal flux

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Cited by 11 publications
(5 citation statements)
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“…Growth from the melt by the low-pressure solution growth method [1] has yielded individual wafers on sapphire templates. High-pressure flux growth and solution growth [2,3] have produced free-standing platelets, but these have not been scaled up to ingot size. Vapor phase growth by sublimation [4,5] yields small crystallites but no large area substrates.…”
Section: Introductionmentioning
confidence: 99%
“…Growth from the melt by the low-pressure solution growth method [1] has yielded individual wafers on sapphire templates. High-pressure flux growth and solution growth [2,3] have produced free-standing platelets, but these have not been scaled up to ingot size. Vapor phase growth by sublimation [4,5] yields small crystallites but no large area substrates.…”
Section: Introductionmentioning
confidence: 99%
“…The UV emission comes from the recombination of free excitons, while the visible emission such as green and yellow emission is related to the structural defects of oxygen vacancies and oxygen interstitials, , respectively. Note that when the measurement range is extended to 800 nm, an additional near-infrared (NIR) peak located at a wavelength twice the UV emission band is observed (Supporting Information, Figure S3), as Shin et al and Hsu et al observed in the PL spectra of GaN and ZnO, respectively. They believed that this NIR peak was ascribed to a deep-level defect-related emission. , However, diagnosing this peak with short-pass and long-pass filters (Supporting Information, Figure S4) shows that this NIR peak is not a real emission band from ZnO but a “fake” peak caused by a second-order grating diffraction of the UV emission band.…”
Section: Resultsmentioning
confidence: 56%
“…Among the micrographs, for the combinations 6:1, 3:1 the rods formed, look flat at the end and for 3:2, 1:1 the ends of the rods are tapered. The tapering feature shows that the growth rate of the zinc rich positive polar plane grows faster due to rapid attaching of Zn(OH) 2− 4 on the [0001] plane [10]. More over, from the absence of the tapered tip in the lower concentration of the CTAB, it is evident that higher the CTAB concentration faster the growth rate of the [0001] plane.…”
Section: Resultsmentioning
confidence: 99%
“…Hence, the study on the growth habit of ZnO nanostructures in different chemical ambience has been considered as significant. The growth of metal-oxide nanostructures from aqueous solutions of suitable metal salt precursors by hydrothermal conditions is very economic and efficient method for the preparation of well defined nanostructures [10]. In the recent past, the assistance of surfactant (Cetyl Trimethyl Ammonium Bromide) in the hydrothermal synthesis of oxide nanoparticles have previously been reported [11][12][13][14].…”
Section: Introductionmentioning
confidence: 99%